Wide bandgap extrinsic photoconductive switches

IEEE Transactions on Plasma Science

Volumn 36, Issue 5 PART 3, 2008, Pages 2528-2532

  Sullivan, James S ^a   Stanley, Joel R ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Absorption; Gallium nitride; Light triggered switches; Nonlinear optics; Optical device fabrication; Optical pulses; Optical switches; Photoconducting devices; photoconductivity; Semiconductor switches; Silicon carbide; Substrates

Indexed keywords

ABSORPTION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC INSULATING MATERIALS; ELECTRIC SWITCHES; ELECTRIC SWITCHGEAR; ENERGY GAP; FABRICATION; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LASER PULSES; LIGHT; LIGHT PULSE GENERATORS; NITRIDES; NONLINEAR OPTICS; OPTICAL DEVICES; OPTICAL INSTRUMENTS; OPTICAL MATERIALS; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SUBSTRATES; SWITCHES; TRANSITION METALS; VANADIUM;

A PLANES; BAND GAPS; CRITICAL ELECTRIC FIELDS; ELECTRIC FIELD STRENGTHS; ELECTRON SATURATION VELOCITIES; GAN SUBSTRATES; HIGH VOLTAGES; HIGH-POWER; LIGHT-TRIGGERED SWITCHES; OPTICAL DEVICE FABRICATION; OPTICAL PULSES; PHOTO-CONDUCTIVE SWITCHES; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVE SWITCHING; SEMI-INSULATING; WIDE BAND GAPS;

OPTICAL SWITCHES;

EID: 60049088253     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2008.2002147     Document Type: Article

References (9)

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