Selective electron beam irradiation of high purity semi-insulating 4H silicon carbide substrates to characterize the effects on photoconductive semiconductor switch operation

Digest of Technical Papers-IEEE International Pulsed Power Conference

Volumn , Issue , 2013, Pages

  Bullick, A ^a   Mauch, D ^a   Sullivan, W ^a   Dickens, J ^a  

^a Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; APPLIED VOLTAGES; ELECTRON BEAM IRRADIATION; HIGH ENERGY ELECTRON BEAM IRRADIATION; HIGH-PURITY SEMI-INSULATING 4H-SIC; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; SEMI-INSULATING; TESTING CONFIGURATIONS;

CRYSTAL DEFECTS; ELECTRON BEAMS; IRRADIATION; PHOTOCONDUCTIVE SWITCHES;

SILICON CARBIDE;

EID: 84888635510     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PPC.2013.6627484     Document Type: Conference Paper

References (8)

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