Design and characterization of silicon carbide photoconductive switches for high field applications

Journal of Applied Physics

Volumn 100, Issue 10, 2006, Pages

  Kelkar, K S ^a   Islam, N E ^a   Fessler, C M ^a   Nunnally, W C ^a  

^a University of Missouri   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE ACCUMULATION; HIGH FIELD APPLICATIONS; PREMATURE BREAKDOWN; SILICON CARBIDE PHOTOCONDUCTIVE SWITCHES; DEEP-ACCEPTOR-TYPE; PHOTOCONDUCTIVE SWITCH;

ANODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; IONIZATION; PHOTOCONDUCTING DEVICES; SWITCHES; IMPACT IONIZATION; PHOTOCURRENTS; SILICON CARBIDE;

SILICON CARBIDE; SWITCHES;

EID: 33845204210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2365713     Document Type: Article

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