Chemical Treatment of Low-k Dielectric Surfaces for Patterning of Thin Solid Films in Microelectronic Applications

ACS Applied Materials and Interfaces

Volumn 8, Issue 9, 2016, Pages 6293-6300

  Guo, Lei ^a   Qin, Xiangdong ^a   Zaera, Francisco ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

atomic layer deposition; low k dielectrics; ozonolysis; selective deposition; silylation; surface chemistry; ultraviolet photoactivation

Indexed keywords

ABSORPTION SPECTROSCOPY; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DIELECTRIC MATERIALS; HAFNIUM OXIDES; HYDROPHILICITY; LIGHT ABSORPTION; LOW-K DIELECTRIC; MICROELECTRONICS; OZONE; REFRACTIVE INDEX; SURFACE CHEMISTRY;

CHEMICAL MECHANICAL POLISHING(CMP); ELLIPSOMETRY MEASUREMENTS; MICROELECTRONIC APPLICATIONS; MICROELECTRONICS FABRICATION; OZONOLYSIS; PHOTO ACTIVATIONS; SELECTIVE DEPOSITION; SILYLATIONS;

ATOMIC LAYER DEPOSITION;

EID: 84960539440     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/acsami.6b00495     Document Type: Article

References (55)

1. Gambino, J. P. Process Challenges for Integration of Copper Interconnects with Low-k Dielectrics ECS Trans. 2011, 35 (4) 687-699 10.1149/1.3572313
2. Pease, R. F.; Chou, S. Y. Lithography and Other Patterning Techniques for Future Electronics Proc. IEEE 2008, 96 (2) 248-270 10.1109/JPROC.2007.911853
3. Biswas, A.; Bayer, I. S.; Biris, A. S.; Wang, T.; Dervishi, E.; Faupel, F. Advances in Top-Down and Bottom-up Surface Nanofabrication: Techniques, Applications & Future Prospects Adv. Colloid Interface Sci. 2012, 170 (1-2) 2-27 10.1016/j.cis.2011.11.001
4. Creighton, J. R.; Ho, P. Introduction to Chemical Vapor Deposition (CVD). In Chemical Vapor Deposition (Surface Engineering Series Vol. 2), Park, J.-H.; Sudarshan, T. S., Eds.; ASM International: Materials Park, OH, 2001; pp 1-22.
5. Choy, K. L. Chemical Vapor Deposition of Coatings Prog. Mater. Sci. 2003, 48 (2) 57-170 10.1016/S0079-6425(01)00009-3
6. Fahlman, B. D. Recent Advances in Chemical Vapor Deposition Curr. Org. Chem. 2006, 10 (9) 1021-1033 10.2174/138527206777435481
7. Leskelä, M.; Ritala, M. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges Angew. Chem., Int. Ed. 2003, 42 (45) 5548-5554 10.1002/anie.200301652
8. George, S. M. Atomic Layer Deposition: An Overview Chem. Rev. 2010, 110 (1) 111-131 10.1021/cr900056b
9. Zaera, F. Mechanisms of Surface Reactions in Thin Solid Film Chemical Deposition Processes Coord. Chem. Rev. 2013, 257 (23-24) 3177-3191 10.1016/j.ccr.2013.04.006
10. Johnson, R. W.; Hultqvist, A.; Bent, S. F. A Brief Review of Atomic Layer Deposition: From Fundamentals to Applications Mater. Today 2014, 17 (5) 236-246 10.1016/j.mattod.2014.04.026
11. Mackus, A. J. M.; Bol, A. A.; Kessels, W. M. M. The Use of Atomic Layer Deposition in Advanced Nanopatterning Nanoscale 2014, 6 (19) 10941-10960 10.1039/C4NR01954G
12. Minaye Hashemi, F. S.; Prasittichai, C.; Bent, S. F. Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition ACS Nano 2015, 9 (9) 8710-8717 10.1021/acsnano.5b03125
13. Fang, M.; Ho, J. C. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning ACS Nano 2015, 9 (9) 8651-8654 10.1021/acsnano.5b05249
14. Lercel, M. J.; Whelan, C. S.; Craighead, H. G.; Seshadri, K.; Allara, D. L. High-Resolution Silicon Patterning with Self-Assembled Monolayer Resists J. Vac. Sci. Technol., B: Microelectron. Process. Phenom. 1996, 14 (6) 4085-4090 10.1116/1.588596
15. Park, K. J.; Doub, J. M.; Gougousi, T.; Parsons, G. N. Microcontact Patterning of Ruthenium Gate Electrodes by Selective Area Atomic Layer Deposition Appl. Phys. Lett. 2005, 86 (5) 051903 10.1063/1.1852079
16. Sinha, A.; Hess, D. W.; Henderson, C. L. Area Selective Atomic Layer Deposition of Titanium Dioxide: Effect of Precursor Chemistry J. Vac. Sci. Technol., B: Microelectron. Nanometer Struct. - Process., Meas., Phenom. 2006, 24 (6) 2523-2532 10.1116/1.2359728
17. Färm, E.; Kemell, M.; Santala, E.; Ritala, M.; Leskelä, M. Selective-Area Atomic Layer Deposition Using Poly(Vinyl Pyrrolidone) as a Passivation Layer J. Electrochem. Soc. 2010, 157 (1) K10-K14 10.1149/1.3250936
18. Zhang, W.; Engstrom, J. R. Effect of Substrate Composition on Atomic Layer Deposition Using Self-Assembled Monolayers as Blocking Layers J. Vac. Sci. Technol., A 2016, 34 (1) 01A107 10.1116/1.4931722
19. Guo, L.; Zaera, F. Spatial Resolution in Thin Film Deposition on Silicon Surfaces by Combining Silylation and UV/Ozonolysis Nanotechnology 2014, 25, 504006 10.1088/0957-4484/25/50/504006
20. Deyhimi, F.; Coles, J. A. Rapid Silylation of a Glass Surface: Choice of Reagent and Effect of Experimental Parameters on Hydrophobicity Helv. Chim. Acta 1982, 65 (6) 1752-1759 10.1002/hlca.19820650610
21. Schmohl, A.; Khan, A.; Hess, P. Functionalization of Oxidized Silicon Surfaces with Methyl Groups and Their Characterization Superlattices Microstruct. 2004, 36 (1-3) 113-121 10.1016/j.spmi.2004.08.026
22. Heo, J.; Won, S. J.; Eom, D.; Lee, S. Y.; Ahn, Y. B.; Hwang, C. S.; Kim, H. J. The Role of the Methyl and Hydroxyl Groups of Low-k Dielectric Films on the Nucleation of Ruthenium by ALD Electrochem. Solid-State Lett. 2008, 11 (8) H210-H213 10.1149/1.2929064
23. Vig, J. R. UV/Ozone Cleaning of Surfaces J. Vac. Sci. Technol., A 1985, 3 (3) 1027-1034 10.1116/1.573115
24. Hook, D. A.; Olhausen, J. A.; Krim, J.; Dugger, M. T. Evaluation of Oxygen Plasma and UV Ozone Methods for Cleaning of Occluded Areas in Mems Devices J. Microelectromech. Syst. 2010, 19 (6) 1292-1298 10.1109/JMEMS.2010.2067193
25. 2/GaN Interfaces J. Appl. Phys. 2011, 109 (8) 084511 10.1063/1.3572236
26. Rickerby, J.; Steinke, J. H. G. Current Trends in Patterning with Copper Chem. Rev. 2002, 102 (5) 1525-1550 10.1021/cr0104476
27. Gambino, J. 8-Process Technology for Copper Interconnects. In Handbook of Thin Film Deposition, 3 rd ed.; Seshan, K., Ed.; William Andrew Publishing: Oxford, 2012; pp 221-269.
28. Grill, A. Porous Psicoh Ultralow-k Dielectrics for Chip Interconnects Prepared by Pecvd Annu. Rev. Mater. Res. 2009, 39 (1) 49-69 10.1146/annurev-matsci-082908-145305
29. Grill, A.; Gates, S. M.; Ryan, T. E.; Nguyen, S. V.; Priyadarshini, D. Progress in the Development and Understanding of Advanced Low k and Ultralow k Dielectrics for Very Large-Scale Integrated Interconnects-State of the Art Appl. Phys. Rev. 2014, 1 (1) 011306 10.1063/1.4861876
30. Qinghuang, L.; Alshakim, N.; Shyng-Tsong, C.; Philip, B.; Stephan, A. C.; Blake, D.; Richard, K.; Ranee, K.; Eric, L.; Debra, N.; Jyotica, P.; Hosadurga, S.; Ratnam, S.; Sampath, P.; Robert, M.; Terry, S.; Robert, W. Integration of Photo-Patternable Low-K Material into Advanced Cu Back-End-of-the-Line Jpn. J. Appl. Phys. 2010, 49 (5S2) 05FB02 10.1143/JJAP.49.05FB02
31. Volksen, W.; Lionti, K.; Magbitang, T.; Dubois, G. Hybrid Low Dielectric Constant Thin Films for Microelectronics Scr. Mater. 2014, 74 (0) 19-24 10.1016/j.scriptamat.2013.05.025
32. Hayashi, Y.; Kojima, A.; Nakamura, N.; Masuda, H.; Sato, K.; Hayashi, H.; Matsunaga, N.; Shibata, H. Impact of Gas Silylation Process on Wire-to-Wire Leakage Current for Low-k/Cu Dual-Damascene Interconnects Advanced Metallization Conference (AMC) 2009, 2009, 25-31
33. Spooner, T. A.; Arnold, J. C.; Canaperi, D.; Chen, J.; Chen, S.-T.; Gates, S. M.; Isobayashi, A.; Leung, P.; Papa Rao, S. S.; Sankarapandian, M.; Shobha, H.; Van der Straten, O. The Effect of Material and Process Interactions on BEOL Integration ECS Trans 2009, 25 (7) 279-289 10.1149/1.3203966
34. Lionti, K.; Volksen, W.; Magbitang, T.; Darnon, M.; Dubois, G. Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage ECS J. Solid State Sci. Technol. 2015, 4 (1) N3071-N3083 10.1149/2.0081501jss
35. Hayashi, Y.; Ohtake, H.; Kawahara, J.; Tada, M.; Saito, S.; Inoue, N.; Ito, F.; Tagami, M.; Ueki, M.; Furutake, N.; Takeuchi, T.; Yamamoto, H.; Abe, M. Comprehensive Chemistry Designs in Porous Sioch Film Stacks and Plasma Etching Gases for Damageless Cu Interconnects in Advanced ULSI Devices IEEE Trans. Semicond. Manuf. 2008, 21 (3) 469-480 10.1109/TSM.2008.2001225
36. Naoya, I.; Naoya, F.; Fuminori, I.; Hironori, Y.; Tsuneo, T.; Yoshihiro, H. Impact of Barrier Metal Sputtering on Physical and Chemical Damages in Low- k SiOCH Films with Various Hydrocarbon Content Jpn. J. Appl. Phys. 2008, 47 (4S) 2468 10.1143/JJAP.47.2468
37. Gates, S. M.; Grill, A.; Dimitrakopoulos, C.; Patel, V.; Chen, S. T.; Spooner, T.; Ryan, E. T.; Cohen, S. A.; Simonyi, E.; Liniger, E.; Ostrovski, Y.; Bhatia, R. Integration Compatible Porous SiCOH Dielectrics from 45 to 22 nm Advanced Metallization Conference (AMC) 2009, 2009, 531-536
38. Shi, H.; Huang, H.; Im, J.; Ho, P. S.; Zhou, Y.; Pender, J. T.; Armacost, M.; Kyser, D. Minimization of Plasma Ashing Damage to OSG Low-k Dielectrics, In Interconnect Technology Conference (IITC), 2010 International, 6-9 June 2010, 2010; 2010; pp 1-3. 10.1109/IITC.2010.5510308
39. Darnon, M.; Chevolleau, T.; David, T.; Posseme, N.; Bouyssou, R.; Hurand, R.; Joubert, O.; Licitra, C.; Rochat, N.; Bailly, F.; Verove, C. Impact of Ambient Atmosphere on Plasma-Damaged Porous Low-k Characterization, In Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, 8-12 May 2011, 2011; 2011; pp 1-3. 10.1109/IITC.2011.5940348
40. Seah, M. P.; Dench, W. A. Quantitative Electron Spectroscopy of Surfaces: A Standard Data Base for Electron Inelastic Mean Free Paths in Solids Surf. Interface Anal. 1979, 1 (1) 2-11 10.1002/sia.740010103
41. Pillai, S.; Pai, R. K. Controlled Growth and Formation of SAMs Investigated by Atomic Force Microscopy Ultramicroscopy 2009, 109 (2) 161-166 10.1016/j.ultramic.2008.10.002
42. Chen, G.-S.; Chen, S.-T.; Chen, Y. W.; Hsu, Y.-C. Site-Selective Electroless Metallization on Porous Organosilica Films by Multisurface Modification of Alkyl Monolayer and Vacuum Plasma Langmuir 2013, 29 (2) 511-518 10.1021/la303473r
43. Choi, C. K.; Kim, C. Y.; Navamathavan, R.; Lee, H. S.; Woo, J.-K.; Hyun, M. T.; Lee, H. J.; Jeung, W. Y. UV Irradiation Effects on the Bonding Structure and Electrical Properties of Ultra Low-k SiOC(-H) Thin Films for 45 nm Technology Node Curr. Appl. Phys. 2011, 11 (5) S109-S113 10.1016/j.cap.2011.05.004
44. Jourdan, N.; Krishtab, M. B.; Baklanov, M. R.; Meersschaut, J.; Wilson, C. J.; Ablett, J. M.; Fonda, E.; Zhao, L.; Van Elshocht, S.; Tökei, Z.; Vancoille, E. Study of Chemical Vapor Deposition of Manganese on Porous SiOCH Low-k Dielectrics Using Bis(Ethylcyclopentadienyl)Manganese Electrochem. Solid-State Lett. 2012, 15 (5) H176-H178 10.1149/2.006206esl
45. 4 on Silica J. Phys. Chem. 1993, 97 (19) 5085-5094 10.1021/j100121a040
46. Matero, R.; Rahtu, A.; Ritala, M.; Leskelä, M.; Sajavaara, T. Effect of Water Dose on the Atomic Layer Deposition Rate of Oxide Thin Films Thin Solid Films 2000, 368 (1) 1-7 10.1016/S0040-6090(00)00890-7
47. Kelly, M. J.; Han, J. H.; Musgrave, C. B.; Parsons, G. N. In-Situ Infrared Spectroscopy and Density Functional Theory Modeling of Hafnium Alkylamine Adsorption on Si-OH and Si-H Surfaces Chem. Mater. 2005, 17 (21) 5305-5314 10.1021/cm051064h
48. 3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry J. Phys. Chem. C 2008, 112 (49) 19530-19539 10.1021/jp804296a
49. 2 Interface Chemistry Studied by Synchrotron Radiation X-Ray Photoelectron Spectroscopy Appl. Phys. Lett. 2002, 81 (19) 3627-3629 10.1063/1.1520334
50. Verdonck, P.; Delabie, A.; Swerts, J.; Farrell, L.; Baklanov, M. R.; Tielens, H.; Van Besien, E.; Witters, T.; Nyns, L.; Van Elshocht, S. Chemisorption of ALD Precursors in and on Porous Low-k Films Microelectron. Eng. 2013, 106, 81-84 10.1016/j.mee.2013.01.004
51. 2 Capping Layer Effect on Porous Low Dielectric Constant Materials Appl. Surf. Sci. 2015, 354 (Part A) 115-119 10.1016/j.apsusc.2015.02.070
52. 2 Interface J. Appl. Phys. 2007, 102 (4) 043527 10.1063/1.2773699
53. 3 Treatment Electrochem. Solid-State Lett. 2008, 11 (2) G5-G8 10.1149/1.2812413
54. Tokei, Z.; Croes, K.; Beyer, G. P. Reliability of Copper Low-k Interconnects Microelectron. Eng. 2010, 87 (3) 348-354 10.1016/j.mee.2009.06.025
55. Wojcik, H.; Krien, C.; Merkel, U.; Bartha, J. W.; Knaut, M.; Geidel, M.; Adolphi, B.; Neumann, V.; Wenzel, C.; Bendlin, M.; Richter, K.; Makarov, D. Characterization of Ru-Mn Composites for ULSI Interconnects Microelectron. Eng. 2013, 112, 103-109 10.1016/j.mee.2013.02.057