Impact of barrier metal sputtering on physical and chemical damages in low-k SiOCH films with various hydrocarbon content

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 2468-2472

  Inoue, Naoya ^a   Furutake, Naoya ^a   Ito, Fuminori ^a   Yamamoto, Hironori ^a   Takeuchi, Tsuneo ^a   Hayashi, Yoshihiro ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Damage; Low k; Plasma; SiOCH; Sputtering

Indexed keywords

CERAMIC CAPACITORS; CHEMICAL BONDS; DIELECTRIC MATERIALS; DIELECTRIC WAVEGUIDES; HYDROCARBONS; IONS; MAGNETOPLASMA; PERMITTIVITY; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON; SILICON WAFERS;

ACCELERATED IONS; ANODE SHEATHS; BARRIER METALS; CHEMICAL DAMAGES; DAMAGE; DC BIASSED; DIELECTRIC CONSTANTS; HEXAGONAL; HYDROCARBON CONTENTS; LOW DIELECTRIC CONSTANTS; LOW-K; LOW-K SIOCH DIELECTRICS; POTENTIAL DROPT; RF SPUTTERING SYSTEMS; SILICA STRUCTURES; SIOCH; SIOCH FILMS; STACKING; WAFER SURFACES;

ORGANIC COMPOUNDS;

EID: 54249162428     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2468     Document Type: Article

References (15)

1. M. Tada, Y. Hayashi, T. Tamura, N. Inoue, F. Ito, M. Yoshiki, H. Ohtake, M. Narihiro, M. Tagami, M. Ueki, K. Hijioka, M. Abe, T. Takeuchi, S. Saito, T. Onodera, N. Furutake, K. Arai, K. Fujii, and Y. Hayashi: IEDM Tech. Dig., 2003, p. 845.
2. A. Grill, D. Edelstein, D. Restaino, M. Lane, S. Gates, E. Liniger, T. Shaw, X.-H. Liu, D. Klaus, V. Patel, S. Cohen, E. Simonyi, N. Klymko, S. Lane, K. Ida, S. Vogt, T. Van Kleeck, C. Davis, M. Ono, T. Nogami, and T. Ivers: Proc. IEEE Int. Interconnect Technology Conf., 2004, p. 54.
3. T. Nakamura and A. Nakashima: Proc. IEEE Int. Interconnect Technology Conf., 2004, p. 175.
4. M. Ueki, M. Narihiro, H. Ohtake, M. Tagami, M. Tada, F. Ito, Y. Harada, M. Abe, N. Inoue, K. Arai, T. Takeuchi, Saito, T. Onodera, N. Furutake, M. Hiroi, M. Sekine, and Y. Hayashi: Symp. VLSI Tehcnology Dig. Tech. Pap., 2004, p. 60.
5. M. Tagami, H. Ohtake, M. Tada, M. Ueki, F. Ito, T. Taiji, Y. Kasama, T. Iwamoto, H. Wakabayashi, T. Fukai, K. Arai, S. Saito, H. Yamamoto. M. Abe, M. Narihiro, N. Furutake, T. Onodera, T. Takeuchi, Y. Tsuchiya, N. Oda, M. Sekine, M. Hane, and Y. Hayashi: Symp. VLSI Tehcnology Dig. Tech. Pap., 2004, p. 108.
6. Y. H. Kim, S. K. Lee, and H. J. Kim: J. Vac. Sci. Tcchnol. A 18 (2000) 1216.
7. P.-T. Liu, T. C. Chang, Y. S. Mor, C. W. Chen, T. M. Sai, C. J. Chu, F. M. Pan, and S. M. Sze: Electrochem. Solid-State Lett. 5 (2002) G11.
8. K. Yonekura, S. Sakamori, K. Goto, M. Matsuura, N. Fujiwara, and M. Yoneda; J. Vac. Sci. Tcchnol. B 22 (2004) 548.
9. W. Chen, Q. Han, R. Most, C. Waldfried, O. Escorcia, and I. Berry: J. Electrochem. Soc. 151 (2004) F182.
10. G. Mannaert, M. R. Baklanov, Q. T. Le, Y. Travaly, W. Boullart, S. Vanhaelemeersch, and A. M. Jonas: J. Vac. Sci. Technol. B 23 (2005) 2198.
11. A. Grill and V. Patel: J. Electrochem. Soc. 153 (2006) F169.
12. M. A. Worsley, S. F. Bent, N. C. M. Fuller, T. L. Tai, J. Doyle, M. Rothwell, and T. Dalton: J. Appl. Phys. 101 (2007) 013305.
13. D. Eon, M. Darnon, T. Chevolleau, T. David, L. Vallier, and O. Joubert: J. Vac. Sci. Technol. B 25 (2007) 715.
14. Y. Hayashi, E. Itoh, Y. Harada, T. Takeuchi, M. Tada, M. Tagami, H. Ohtake, K. Hijioka, S. Saito, T. Onodera, D. Hara, and K. Tokudome: Proc. IEEE Int. Interconnect Technology Conf., 2004, p. 225.
15. F. Ito, T. Takeuchi, and Y. Hayashi: Proc. 22nd Advanced Metallization Conf., 2006, p. 295.