Atomic layer deposition HfO 2 capping layer effect on porous low dielectric constant materials

Applied Surface Science

Volumn 354, Issue , 2015, Pages 115-119

  Cheng, Yi Lung ^a   Kao, Kai Chieh ^a   Huang, Chi Jia ^a   Chen, Giin Shan ^b   Fang, Jau Shiung ^c  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

^b FENG CHIA UNIVERSITY   (Taiwan)

^c NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Breakdown; HfO 2; Low k dielectric; Porogen; Reliability; TDDB

Indexed keywords

ATOMIC LAYER DEPOSITION; COPPER; HAFNIUM OXIDES; LOW-K DIELECTRIC; RELIABILITY;

BREAKDOWN; CAPPING LAYER EFFECTS; HFO2; LOW DIELECTRIC CONSTANT MATERIALS; LOW DIELECTRIC CONSTANTS; POROGENS; POROUS LOW-K DIELECTRICS; TDDB;

DIELECTRIC MATERIALS;

EID: 84944280761     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2015.02.070     Document Type: Conference Paper

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