Integration compatible porous SiCOH dielectrics from 45 to 22 nm

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 531-536

  Gates, S M ^a   Grill, A ^a   Dimitrakopoulos, C ^a   Patel, V ^a   Chen, S T ^b   Spooner, T ^b   Ryan, E T ^c   Cohen, S A ^a   Simonyi, E ^a   Liniger, E ^a   Ostrovski, Y ^a   Bhatia, R ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK END OF THE LINES; CLASS 1; COPPER DAMASCENE; DAMASCENE CU; K-VALUES; METHYLENE GROUPS; SI ATOMS;

DIELECTRIC MATERIALS; METALLIZING; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 70349914048     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. S. Sankaran et al, Proc. IEDM 2006.
2. S. Gates et al, Proc. AMC 2006, p. 351.
3. C. Dimitrakopoulos et al, submitted to the AMC 2008.
4. E.T. Ryan, et al, submitted to J. Appl. Phys.
5. To be published.