Study of chemical vapor deposition of manganese on porous SiCOH low-k dielectrics using bis(ethylcyclopentadienyl)manganese

Electrochemical and Solid-State Letters

Volumn 15, Issue 5, 2012, Pages

  Jourdan, Nicolas ^a   Krishtab, Mikhail B ^b   Baklanov, Mikhail R ^a   Meersschaut, Johan ^a   Wilson, Christopher J ^a   Ablett, James M ^c   Fonda, Emiliano ^c   Zhao, Larry ^a   Van Elshocht, Sven ^a   Tökei, Zsolt ^a   Vancoille, Eric ^a  

^a IMEC   (Belgium)

^b SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^c SYNCHROTRON SOLEIL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER DIFFUSION BARRIER; LOW K DIELECTRICS; LOW-K FILMS; OXIDE PHASE FORMATION; PORE-SEALING; PRECURSOR MOLECULES; SILANOL GROUPS; SILICATE PHASE;

CHEMICAL VAPOR DEPOSITION; CHEMISORPTION; DESORPTION; DIELECTRIC MATERIALS; DIFFUSION BARRIERS; PORE SIZE; SILICATES; VAPORS;

MANGANESE;

EID: 84860206847     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.006206esl     Document Type: Article

References (21)

1. Roy G. Gordon, Hoon Kim, Yeung Au, Hongtao Wang, Harish B. Bhandari, Yiqun Liu, Don K. Lee, and Youbo Lin, Proc. Advanced Metallization Conference, p. 1 (2008).
2. K. Neishi, S. Aki, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka, and J. Koike, Appl. Phys. Lett., 93, 032106 (2008). 10.1063/1.2963984
3. K. Matsumoto, K. Neishi, H. Itoh, H. Sato, S. Hosaka, and J. Koike, Appl. Phys. Express, 2, 036503 (2009). 10.1143/APEX.2.036503
4. K. Matsumoto, K. Neishi, H. Itoh, H. Miyoshi, H. Sato, S. Hosaka, and J. Koike, Jpn. J. Appl. Phys., 49, 05FA12 (2010). 10.1143/JJAP.49.05FA12
5. E. Kunnen, M. R. Baklanov, A. Franquet, D. Shamiryan, T. V. Rakhimov, A. M. Urbanowicz, H. Struyf, and W. Boullart, J. Vac. Sci. Technol. B, 28 (3), 450 (2010). 10.1116/1.3372838
6. A. M. Urbanowicz, D. Shamiryan, A. Zaka, P. Verdonck, S. De Gendt, and M. R. Baklanov, J. Electrochem. Soc., 157, H565 (2010). 10.1149/1.3355881
7. M. R. Baklanov and K. P. Mogilnikov, Microelectronic Eng., 64, 335 (2002). 10.1016/S0167-9317(02)00807-9
8. M. R. Baklanov, K. P. Mogilnikov, V. G. Polovinkin, and F. N. Dultsev, J. Vac. Sci. Technol. B, 18, 1385 (2000). 10.1116/1.591390
9. T. C. Chang, P. T. Liu, Y. S. Mor, T. M. Tsai, C. W. Chen, Y. J. Mei, F. M. Pan, W. F. Wu, and S. M. Sze, J. Vac. Sci. Technol. B, 20 (4), 1561 (2002). 10.1116/1.1495876
10. T. V. Rakhimova, IEEE Trans. Plasma Sci., 37 (9), 1697 (2009). 10.1109/TPS.2009.2023991
11. M. W. Schmidt, K. K. Baldridge, J. A. Boatz, S. T. Elbert, M. S. Gordon, J. H. Jensen, S. Koseki, N. Matsunaga, K. A. Nguyen, S. J. Su, T. L. Windus, M. Dupuis, J. A. Montgomery, J. Comput. Chem., 14 (11), 1347 (1993). 10.1002/jcc.540141112
12. M. Ablett, J. C. Woicik, Zs. Tkei, S. List, and E. Dimasi, Appl. Phys. Lett., 94, 042112 (2009). 10.1063/1.3068500
13. HSC Chemistry, 5.11 Edition, Outokumpu Research Oy, Pori, Finland.
14. B. B. Burton, F. H. Fabreguette, and S. M. George, Thin Solid Films, 517, 5658 (2009). 10.1016/j.tsf.2009.02.050
15. Y. Au, Y. Lin, H. Kim, E. Beh, Y. Liu, and R. G. Gordon, J. Electrochem. Soc., 157, D341 (2010). 10.1149/1.3364799
16. D. Shamiryan, M. R. Baklanov, and K. Maex, J. Vac. Sci. Technol. B, 21, 220 (2003). 10.1116/1.1539067
17. T. Usui, H. Nasu, J. Koike, M. Wada, S. Takahashi, N. Shimizu, T. Nishikawa, M. Yoshimaru, and H. Shibata, Proc. IEEE Int. Interconnect Technology Conf., p. 188 (2005).
18. J. Koike and M. Wada, Appl. Phys. Lett., 87, 041911 (2005). 10.1063/1.1993759
19. J. Koike, M. Haneda, J. Iijima, and M. Wada, Proc. IEEE Int. Interconnect Technology Conf., p. 161 (2006).
20. M. Haneda, J. Iijima, and J. Koike, Appl. Phys. Lett., 90, 252107 (2007). 10.1063/1.2750402
21. J. Koike, M. Haneda, J. Iijima, Y. Otsuka, H. Sako, and K. Neishi, J. Appl. Phys., 102, 043527 (2007). 10.1063/1.2773699