Characterization of Ru-Mn composites for ULSI interconnects

Microelectronic Engineering

Volumn 112, Issue , 2013, Pages 103-109

  Wojcik, H ^a   Krien, C ^b   Merkel, U ^a   Bartha, J W ^a   Knaut, M ^a   Geidel, M ^a   Adolphi, B ^a   Neumann, V ^a   Wenzel, C ^a   Bendlin, M ^a   Richter, K ^a   Makarov, D ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

Bias temperature stress; Cu diffusion barrier; Direct Cu plating; Ru Mn; Ruthenium composite

Indexed keywords

BARRIER PERFORMANCE; BIAS TEMPERATURE STRESS; CU DIFFUSION BARRIER; CU PLATINGS; LOW K DIELECTRICS; RU-MN; ULSI INTERCONNECTS; XPS DEPTH PROFILING;

COPPER PLATING; DIELECTRIC MATERIALS; DIFFUSION BARRIERS; GRAIN BOUNDARIES; MANGANESE;

COPPER;

EID: 84884699798     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.02.057     Document Type: Article

References (10)

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