Area selective atomic layer deposition of titanium dioxide: Effect of precursor chemistry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 6, 2006, Pages 2523-2532

  Sinha, Ashwini ^a   Hess, Dennis W ^a   Henderson, Clifford L ^a  

^a Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALD PRECURSORS; ATOMIC LAYER DEPOSITION (ALD) ); METAL PRECURSORS; POLYMER MASK;

DEPOSITION; DIFFUSION; LAYERED MANUFACTURING; PLASTIC FILMS; POLYMETHYL METHACRYLATES; REMANENCE;

TITANIUM DIOXIDE;

EID: 33845254060     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2359728     Document Type: Article

References (29)

1. M. Ritala and M. Leskela, Handbook of Thin Film Materials (Academic Press, San Diego, CA, 2002), Vol. 1, p. 103-159.
2. M. Leskela and M. Ritala, Angew. Chem., Int. Ed. 42, 5548 (2003).
3. R. Chen, H. Kim, P. C. McIntyre, D. W. Porter, and S. F. Bent, Appl. Phys. Lett. 86, 191910 (2005).
4. R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Appl. Phys. Lett. 84, 4017 (2004).
5. M. Yan, Y. Koide, J. R. Babcock, P. R. Markworth, J. A. Belot, T. J. Marks, and R. P. H. Chang, Appl. Phys. Lett. 79, 1709 (2001).
6. J. P. Lee and M. M. Sung, J. Am. Chem. Soc. 126, 28 (2004).
7. M. H. Park, Y. J. Jang, H. M. Sung-Suh, and M. M. Sung, Langmuir 20, 2257 (2004).
8. A. Sinha, D. W. Hess, and C. L. Henderson, Proc. SPIE 5753, 476 (2005).
9. K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons, Appl. Phys. Lett. 86, 051903 (2005).
10. A. Sinha, D. W. Hess, and C. L. Henderson, J. Electrochem. Soc. 153, G465 (2006).
11. K. Prabhakaran, Y. Kobayashi, and T. Ogino, Surf. Sci. 290, 239 (1993).
12. XPS Handbook, PHI Electronics.
13. A. Rahtu and M. Ritala, Chem. Vap. Deposition 8, 21 (2002).
14. H. Doring, K. Hashimoto, and A. Fujishima, Ber. Bunsenges. Phys. Chem. 96, 620 (1992).
15. M. Ritala, M. Leskela, L. Niinisto, and P. Haussalo, Chem. Mater. 5, 1174 (1993).
16. J. Aarik, A. Aidla, T. Uustare, M. Ritala, and M. Leskela, Appl. Surf. Sci. 161, 385 (2000).
17. R. Matero, A. Rahtu, and M. Ritala, Chem. Mater. 13, 4506 (2001).
18. J. Aarik, A. Aidla, V. Sammelselg, H. Siimon, and T. Uustare, J. Cryst. Growth 169, 496 (1996).
19. R. L. Puurunen, Chem. Vap. Deposition 11, 79 (2005).
20. X. Assfeld, J. Garcia, J. I. Garcia, J. A. Mayoral, M. G. Proietti, M. F. Ruiz-Lopez, and M. C. Sanchez, J. Chem. Soc., Chem. Commun. 2165 (1994).
21. R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Chem. Mater. 17, 536 (2005).
22. J. P. Lee, Y. J. Jang, and M. M. Sung, Adv. Funct. Mater. 13, 873 (2003).
23. G. Reiter, Phys. Rev. Lett. 68, 75 (1992).
24. K. M. Ashley, D. Raghavan, J. F. Douglas, and A. Karim, Langmuir 21, 9518 (2005).
25. A. R. Berens and H. B. Hopfenberg, J. Membr. Sci. 10, 283 (1982).
26. CRC Handbook of Chemistry and Physics, 63rd ed. (CRC, Boca Raton, FL, 1982), p. B-159 and C-721.
27. W. J. Koros and M. W. Hellums, Encyclopedia of Polymer Science and Engineering, 2nd ed. (Wiley, New York, 1990), Vol. Suppl., p. 724-802.
28. J. S. Vrentas, H. T. Liu, and J. L. Duda, J. Appl. Polym. Sci. 25, 1297 (1980).
29. International Technology Roadmap for Semiconductors, 2003.