Chemisorption of ALD precursors in and on porous low-k films

Microelectronic Engineering

Volumn 106, Issue , 2013, Pages 81-84

  Verdonck, P ^a   Delabie, A ^a   Swerts, J ^a   Farrell, L ^a   Baklanov, M R ^a   Tielens, H ^a   Van Besien, E ^a   Witters, T ^a   Nyns, L ^a   Van Elshocht, S ^a  

^a IMEC   (Belgium)

Author keywords

Atomic layer deposition; Low k; Thin films

Indexed keywords

ASPECT RATIO; ATOMS; DEPOSITION; DIELECTRIC FILMS; DIELECTRIC MATERIALS; HAFNIUM OXIDES; LOW-K DIELECTRIC; NANOPORES; THIN FILMS;

ALD PRECURSOR; CONFORMALITY; DEPOSITION MODELING; HIGH ASPECT RATIO TRENCHES; LOW-K MATERIALS; POROUS DIELECTRICS; POROUS LOW-K; TEST MATERIALS;

ATOMIC LAYER DEPOSITION;

EID: 84962706809     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.01.004     Document Type: Conference Paper

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