Impact of gas silylation process on wire-to-wire leakage current for low-k/Cu dual-damascene interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2009, Pages 25-31

  Hayashi, Yumi ^a   Kojima, Akihiro ^a   Nakamura, Naofumi ^a   Masuda, Hideaki ^a   Sato, Koichi ^a   Hayashi, Hisataka ^a   Matsunaga, Noriaki ^a   Shibata, Hideki ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; CONDUCTION REGION; DEFECT SITES; DUAL-DAMASCENE INTERCONNECTS; ELECTRICAL PROPERTY; POOLE-FRENKEL; SILYLATIONS; SIOC SURFACE; STRESS-INDUCED VOIDING; TEMPERATURE DEPENDENT I-V CHARACTERISTICS;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; LEAKAGE (FLUID); METALLIZING; OPTICAL INTERCONNECTS; WIRE;

SILANES;

EID: 70349950468     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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