Minimization of plasma ashing damage to OSG low-k dielectrics

2010 IEEE International Interconnect Technology Conference, IITC 2010

Volumn , Issue , 2010, Pages

  Shi, H ^a   Huang, H ^a   Im, J ^a   Ho, P S ^a   Zhou, Y ^b   Pender, J T ^b   Armacost, M ^b   Kyser, D ^b  

^a The University of Texas at Austin   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERED LAYER; ASHING PROCESS; HARDMASKS; KNUDSEN DIFFUSIVITY; LOW K DIELECTRICS; PASSIVATION LAYER; PATTERNED STRUCTURE; PLASMA ASHING; PLASMA CHEMISTRIES; PLASMA DAMAGE; PLASMA INDUCED DAMAGE; PLASMA PROCESS; PORE SURFACE; POROUS LOW-K; STRUCTURAL GEOMETRY; TRANSPORT KINETIC; TRENCH SIDEWALLS;

OPTIMIZATION; PASSIVATION; PLASMA INTERACTIONS;

DIELECTRIC MATERIALS;

EID: 77955622242     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2010.5510308     Document Type: Conference Paper

References (8)

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3. H. Shi et al., IITC 2008, p31.
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5. M. R. Baklanov et al., N2.6, 2008 MRS Spring Meeting.
6. H. Shi et al., IITC 2009., p 78.
7. Liu et al., IITC 2009, p258.
8. B. Kong et al., J. Vac. Sci. Technol. A 25 (4) 986 (2007).