Enhanced nucleation behavior of atomic-layer-deposited Ru film on low- k dielectrics afforded by UV- O3 treatment

Electrochemical and Solid-State Letters

Volumn 11, Issue 2, 2008, Pages

  Heo, Jaeyeong ^a   Lee, Sang Young ^a   Eom, Dail ^a   Hwang, Cheol Seong ^a,b   Kim, Hyeong Joon ^a,b  

^a Seoul National University   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; METALLIC FILMS; MICROSTRUCTURE; NUCLEATION; RUTHENIUM; ULTRAVIOLET RADIATION;

CHEMISORPTION PROBABILITY; SPECULAR X-RAY REFLECTIVITY;

DIELECTRIC MATERIALS;

EID: 37549009459     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2812413     Document Type: Article

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