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Volumn 38, Issue 3, 2014, Pages 478-496

Two-dimensional MoS2 as a new material for electronic devices

Author keywords

2 dimensional semiconductor; Chemical vapor deposition; Exfoliation; Field effect transistor; Molybdenum disulfide MoS2; Transition metal dichalcogenide; Van der Waals heterostructures

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER CIRCUITS; DEFECT DENSITY; ELECTRON DEVICES; ELECTRONIC EQUIPMENT; ENERGY GAP; GRAPHENE; HETEROJUNCTIONS; INTERFACES (MATERIALS); LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTOELECTRONIC DEVICES; PHOTOTRANSISTORS; THERMOELECTRIC EQUIPMENT; TRANSISTORS; TRANSITION METALS; VAN DER WAALS FORCES; FIELD EFFECT TRANSISTORS; SELENIUM COMPOUNDS; TUNGSTEN COMPOUNDS;

EID: 84910112007     PISSN: 13000101     EISSN: 13036122     Source Type: Journal    
DOI: 10.3906/fiz-1407-16     Document Type: Article
Times cited : (23)

References (133)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.