MoS 2 dual-gate MOSFET with atomic-layer-deposited Al 2O 3 as top-gate dielectric

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 546-548

  Liu, Han ^a   Ye, Peide D ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Atomic layer deposition; MoS 2; MOSFET

Indexed keywords

ATOMIC LAYER DEPOSITED; BACK GATES; BACK-GATE; CHANNEL LENGTH; CHANNEL WIDTHS; FIELD-EFFECT MOBILITIES; HIGH-K DIELECTRIC; MAXIMUM DRAIN CURRENT; MOLYBDENUM DISULFIDE; MOS 2; MOSFET; MOSFET STRUCTURES; MOSFETS; N-CHANNEL; ON/OFF RATIO; TOP-GATE;

ALUMINUM; CRYSTAL ATOMIC STRUCTURE; D REGION; ELECTRON MOBILITY; GATE DIELECTRICS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; MOSFET DEVICES; VANADIUM;

ATOMIC LAYER DEPOSITION;

EID: 84862776831     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2184520     Document Type: Article

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