Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

Nano Research

Volumn 5, Issue 1, 2012, Pages 43-48

  Scalise, Emilio ^a   Houssa, Michel ^a   Pourtois, Geoffrey ^b,c   Afanas'ev, Valery ^a   Stesmans, A ^a  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF ANTWERP   (Belgium)

^c IMEC   (Belgium)

Author keywords

first principles modeling; quasi 2D chalcogenide materials; strain induced semiconductor to metal transition

Indexed keywords

EID: 84855529467     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-011-0183-0     Document Type: Article

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