Electrical control of optical properties of monolayer MoS2

Solid State Communications

Volumn 155, Issue , 2013, Pages 49-52

  Newaz, A K M ^a   Prasai, D ^b   Ziegler, J I ^a   Caudel, D ^a,c   Robinson, S ^d   Haglund, R F ^a,b   Bolotin, K I ^a,b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c FISK UNIVERSITY   (United States)

^d BELMONT UNIVERSITY   (United States)

Author keywords

A. Molybdenum disulfide; B. Nanofabrication; D. Electronic transport

Indexed keywords

FIELD EFFECT TRANSISTORS; LAYERED SEMICONDUCTORS; LIGHT ABSORPTION; MOLYBDENUM DISULFIDE; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE;

A MOLYBDENUM DISULPHIDE; B NANOFABRICATION; D ELECTRONIC TRANSPORT; ELECTRICAL CONTROL; ELECTRICAL GATING; ELECTRONIC TRANSPORT; FIELD-EFFECT TRANSISTOR; GATE VOLTAGES; IN-FIELD; TRANSISTOR GEOMETRIES;

THRESHOLD VOLTAGE;

EID: 84872534236     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.11.010     Document Type: Article

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