Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices

Nanotechnology

Volumn 25, Issue 15, 2014, Pages

  Sharma, Deepak ^a,b   Amani, Matin ^c   Motayed, Abhishek ^b,d   Shah, Pankaj B ^c   Birdwell, A Glen ^c   Najmaei, Sina ^e   Ajayan, Pulickel M ^e   Lou, Jun ^e   Dubey, Madan ^c   Li, Qiliang ^a   Davydov, Albert V ^b  

^a Krasnow Institute for Advanced Study   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF MARYLAND   (United States)

^e Rice University   (United States)

Author keywords

2D materials; flicker noise; generation recombination (G R) noise; lowfrequency noise; MoS2

Indexed keywords

CARRIER NUMBER FLUCTUATION; ELECTRICAL CHARACTERIZATION; FIELD EFFECT TRANSISTOR (FETS); FLICKER NOISE; GENERATION RECOMBINATION; HOPPING TRANSPORT MECHANISM; LOW-FREQUENCY NOISE; MOS2;

ACTIVATION ENERGY; ETCHING; FIELD EFFECT TRANSISTORS; MOLYBDENUM COMPOUNDS; POWER SPECTRAL DENSITY; TEMPERATURE DISTRIBUTION; VAPORS;

PASSIVATION;

EID: 84897877399     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/25/15/155702     Document Type: Article

References (31)

1. Wu Y Q, Lin Y M, Bol A A, Jenkins K A, Xia F N, Farmer D B, Zhu Y and Avouris P 2011 Nature 472 74-8
2. Mak K F, Lee C, Hone J, Shan J and Heinz T F 2010 Phys. Rev. Lett. 105 136805
3. Radisavljevic B, Radenovic A, Brivio J, Giacometti V and Kis A 2011 Nature Nanotechnol. 6 147-50
4. Bertolazzi S, Brivio J and Kis A 2011 ACS Nano 5 9703-9
5. Radisavljevic B, Whitwick M B and Kis A 2011 ACS Nano 5 9934-8
6. Wang H, Yu L L, Lee Y H, Shi Y M, Hsu A, Chin M L, Li L J, Dubey M, Kong J and Palacios T 2012 Nano Lett. 12 4674-80
7. Wang H et al 2012 IEEE International Electron Devices Meeting (IEDM)
8. Perkins F K, Friedman A L, Cobas E, Campbell P M, Jernigan G G and Jonker B T 2013 Nano Lett. 13 668-73
9. Mak K F, He K L, Shan J and Heinz T F 2012 Nature Nanotechnol. 7 494-8
10. Xiao D, Liu G B, Feng W X, Xu X D and Yao W 2012 Phys. Rev. Lett. 108 196802
11. Gourmelon E, Lignier O, Hadouda H, Couturier G, Bernede J C, Tedd J, Pouzet J and Salardenne J 1997 Sol. Energy Mater. Sol. C 46 115-21
12. Zong X, Yan H J, Wu G P, Ma G J, Wen F Y, Wang L and Li C 2008 J. Am. Chem. Soc. 130 7176
13. Hung K K, Ko P K, Hu C M and Cheng Y C 1990 IEEE Trans. Electron Devices 37 654-65
14. Jordan A G and Jordan N A 1965 IEEE Trans. Electron Devices Ed12 148
15. Tian H and Gamal A E 2001 IEEE Trans. Circuits Syst. II: Analog. Digit. Signal Process. 48 151-7
16. Xu J and Deen M J 2002 Electron. Lett. 38 429-31
17. Videnovic-Misic M and Jevtic M M 2008 Microelectron. Reliab. 48 1008-14
18. Balandin A A 2013 Nature Nanotechnol. 8 549-55
19. Lin Y M and Avouris P 2008 Nano Lett. 8 2119-25
20. Shao Q H, Liu G X, Teweldebrhan D, Balandin A A, Runryantsev S, Shur M S and Yan D 2009 IEEE Electron. Device Lett. 30 288-90
21. Sangwan V K, Arnold H N, Jariwala D, Marks T J, Lauhon L J and Hersam M C 2013 Nano Lett. 13 4351-5
22. Ghibaudo G 2003 Proc. Soc. Photo Opt. Instrum. 5113 16-28
23. Ghibaudo G, Roux O, Nguyenduc C, Balestra F and Brini J Phys. Status Solidi. A 124 571-81
24. Najmaei S, Liu Z, Zhou W, Zou X L, Shi G, Lei S D, Yakobson B I, Idrobo J C, Ajayan P M and Lou J 2013 Nature Mater. 12 754-9
25. Amani M, Chin M L, Birdwell A G, O'Regan T P, Najmaei S, Liu Z, Ajayan P M, Lou J and Dubey M 2013 Appl. Phys. Lett. 102 193107
26. Sharma D, Motayed A, Krylyuk S, Li Q L and Davydov A V 2013 IEEE Trans. Electron Devices 60 4206-12
27. Fontana M, Deppe T, Boyd A K, Rinzan M, Liu A Y, Paranjape M and Barbara P 2013 Sci. Rep. 3 1634
28. Radisavljevic B and Kis A 2013 Nature Mater. 12 815-20
29. Ayari A, Cobas E, Ogundadegbe O and Fuhrer M S 2007 J. Appl. Phys. 101 014507
30. Qiu H et al 2013 Nature Commun. 4 2642
31. Zhang Y, Mendez E E and Du X 2011 ACS Nano 5 8124-30