Nanoscale multilayer transition-metal dichalcogenide heterostructures: Band gap modulation by interfacial strain and spontaneous polarization

Journal of Physical Chemistry Letters

Volumn 4, Issue 10, 2013, Pages 1730-1736

  Kou, Liangzhi ^a   Frauenheim, Thomas ^a   Chen, Changfeng ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b UNIVERSITY OF NEVADA   (United States)

Author keywords

band gap; density functional theory; nanodevices; transition metal dichalcogenide heterostructure

Indexed keywords

DENSITY FUNCTIONAL THEORY CALCULATIONS; ELECTRONIC BAND STRUCTURE; NANO-DEVICES; NANOSCALE MULTILAYERS; SEMICONDUCTOR-METAL TRANSITION; SPONTANEOUS ELECTRICAL POLARIZATION; SPONTANEOUS POLARIZATIONS; STRUCTURAL STABILITIES;

DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ENERGY GAP; MULTILAYERS; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; POLARIZATION; STABILITY; TRANSITION METALS;

HETEROJUNCTIONS;

EID: 84878032102     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz400668d     Document Type: Article

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