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Volumn 85, Issue 6, 2012, Pages

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: New direct band gap semiconductors

(2) Kumara, A a Ahluwalia, P K a

a HIMACHAL PRADESH UNIVERSITY (India)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ATOMIC-ORBITAL BASIS; BAND GAP ENERGY; BLUE SHIFT; BULK PHASE; CHALCOGENS; DENSITY OF STATE; DIRECT BAND GAP; DIRECT BAND GAP SEMICONDUCTORS; ELECTRONIC BAND GAPS; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES CALCULATION; HYBRIDISATION; INDIRECT BAND GAP; PARTIAL DENSITY OF STATE; PSEUDOPOTENTIALS; SLAB THICKNESS; TRANSITION METAL DICHALCOGENIDES; TUNABILITIES;

ELECTRONIC STRUCTURE; FERMI LEVEL; MOLYBDENUM; MONOLAYERS; NUMERICAL METHODS; OPTOELECTRONIC DEVICES; QUANTUM CHEMISTRY; TELLURIUM COMPOUNDS; TRANSITION METALS;

ENERGY GAP;

EID: 84864536898 PISSN: 14346028 EISSN: 14346036 Source Type: Journal
DOI: 10.1140/epjb/e2012-30070-x Document Type: Article

Times cited : (532)

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