Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors

Nano Letters

Volumn 13, Issue 5, 2013, Pages 1983-1990

  Liu, Wei ^a   Kang, Jiahao ^a   Sarkar, Deblina ^a   Khatami, Yasin ^a   Jena, Debdeep ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b University of Notre Dame   (United States)

Author keywords

2D semiconductors; contact resistance; field effect transistor; monolayer; transition metal dichalcogenides; tungsten diselenide

Indexed keywords

AB-INITIO DENSITY FUNCTIONAL THEORY CALCULATIONS (DFT); COULOMB SCATTERING; DICHALCOGENIDES; DIGITAL LOGIC APPLICATIONS; ON/OFF CURRENT RATIO; ROOM TEMPERATURE; SYSTEMATIC STUDY; TUNGSTEN DISELENIDE;

CALCULATIONS; CONTACT RESISTANCE; DENSITY FUNCTIONAL THEORY; DESIGN FOR TESTABILITY; ELECTRIC CONTACTORS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; OHMIC CONTACTS; SELENIUM COMPOUNDS; TRANSITION METALS; TUNGSTEN;

MONOLAYERS;

EID: 84877295157     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl304777e     Document Type: Article

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