RRAMs based on anionic and cationic switching: A short overview

Physica Status Solidi - Rapid Research Letters

Volumn 8, Issue 6, 2014, Pages 501-511

  Clima, Sergiu ^a   Sankaran, Kiroubanand ^a   Chen, Yang Yin ^a   Fantini, Andrea ^a   Celano, Umberto ^a,b   Belmonte, Attilio ^a   Zhang, Leqi ^a,b   Goux, Ludovic ^a   Govoreanu, Bogdan ^a   Degraeve, Robin ^a   Wouters, Dirk J ^a,b   Jurczak, Malgorzata ^a   Vandervorst, Wilfried ^a,b   Gendt, Stefan De ^a,b   Pourtois, Geoffrey ^a,c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

Conductive bridging random access memories; Density functional theory; Resistive random access memories; Switching models

Indexed keywords

DENSITY FUNCTIONAL THEORY; HAFNIUM OXIDES;

FIRST-PRINCIPLES SIMULATIONS; MATERIAL CONDUCTIVITIES; NON-VOLATILE MEMORY; RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING MECHANISM; SWITCHING MODEL;

RANDOM ACCESS STORAGE;

EID: 84902650482     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201409054     Document Type: Article

References (105)

1. Y. S. Chen et al., in: IEEE International Electron Devices Meeting (IEDM) (2011), p. 31.3.1.
2. ITRS, http://www.itrs.net/ (2013).
3. B. Govoreanu et al., IEEE International Electron Devices Meeting (IEDM) (2011), p. 31.6.1.
4. G. S. Kar et al., in: Symposium on VLSI Technology (VLSIT) (2012), p. 157.
5. R. Waser, R. Dittmann, M. Salinga, and M. Wuttig, Solid-State Electron. 54, 830 (2010).
6. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009).
7. Y. Y. Chen et al., Appl. Phys. Lett. 100, 113513 (2012).
8. L. Goux, K. Opsomer, R. Degraeve, R. Muller, C. Deta-vernier, D. J. Wouters, M. Jurczak, L. Altimime, and J. A. Kittl, Appl. Phys. Lett. 99, 053502 (2011).
9. F. A. Kröger and H. J. Vink, in: Solid State Physics, edited by T. Frederick Seitz and D. Turnbull (Academic Press, 1956), p. 307.
10. K. M. Kim, D. S. Jeong, and C. S. Hwang, Nanotechnology 22, 254002 (2011).
11. Q. Liu et al., Adv. Mater. 25, 165 (2013).
12. I. Valov and R. Waser, J. Phys. Chem. C 117, 11878 (2013).
13. I. Valov and R. Waser, Adv. Mater. 25, 162 (2013).
14. S. Gao, C. Song, C. Chen, F. Zeng, and F. Pan, J. Phys. Chem. C 117, 11881 (2013).
15. J. P. Perdew, M. Emzerhof, and K. Burke, J. Chem. Phys. 105, 9982 (1996).
16. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
17. P. Giannozzi et al., J. Phys.: Condens Matter 21, 395502 (2009).
18. S. Clima, Y. Y. Chen, R. Degraeve, M. Mees, K. Sankaran, B. Govoreanu, M. Jurczak, S. De Gendt, and G. Pourtois, Appl. Phys. Lett. 100, 133102 (2012).
19. K. Sankaran, L. Goux, S. Clima, M. Mees, J. A. Kittl, M. Jurczak, L. Altimime, G.-M. Rignanese, and G. Pourtois, ECS Trans. 45, 317 (2012).
20. L. Goux et al., IEEE Symposium on VLSI Technology, (2012), p. 69.
21. Y. Y. Chen et al., IEEE Trans. Electron Devices 60, 1114 (2013).
22. Y. Y. Chen et al., IEEE Electron Device Lett. 34, 626 (2013).
23. B. Govoreanu, S. Clima, I. P. Radu, Y.-Y. Chen, D. J. Wouters, and M. Jurczak, IEEE Trans. Electron. Devices 60, 2471 (2013).
24. Y. Y. Chen et al., IEEE Trans. Electron. Devices 59, 3243 (2012).
25. Y. Y. Chen, L. Goux, J. Swerts, M. Toeller, C. Adelmann, J. Kittl, M. Jurczak, G. Groeseneken, and D. J. Wouters, IEEE Electron. Device Lett. 33, 483 (2012).
26. Y. Y. Chen et al., in: IEEE International Electron Device Meeting (IEDM), San Francisco (2012).
27. V. V. Afanas'ev et al., Appl. Phys. Lett. 98, 132901 (2011).
28. B. Govoreanu et al., Ext. Abstr., SSDM Conf., Nagoya, Japan, 2011, p. 1005.
29. P. S. Chen, H. Y. Lee, Y. S. Chen, F. Chen, and M. J. Tsai, Jpn. J. Appl. Phys. 49, 5 (2010).
30. M. N. Kozicki, M. Park, and M. Mitkova, IEEE Trans. Nanotechnol. 4, 331 (2005).
31. M. Kund, G. Beitel, C. U. Pinnow, T. Rohr, J. Schumann, R. Symanczyk, K. D. Ufert, and G. Muller, International Electron Devices Meeting, 2005 (IEEE Cat. No. 05CH37703C) (2005), p. 4.
32. N. Banno, T. Sakamoto, T. Hasegawa, K. Terabe, and M. Aono, Jpn. J. Appl. Phys., Part 1 45, 3666 (2006).
33. T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology 21, 425205 (2010).
34. N. Banno, T. Sakamoto, N. Iguchi, H. Kawaura, S. Kaeriyama, M. Mizuno, K. Terabe, T. Hasegawa, and M. Aono, IEICE Trans. Electron. E89C, 1492 (2006).
35. K. Aratani et al., IEEE International Electron Devices Meeting-IEDM'07, (2007), p. 783.
36. Y. Bernard, V. T. Renard, P. Gonon, and V. Jousseaume, Microelectron. Eng. 88, 814 (2011).
37. D. Yu et al., IEEE Silicon Nanoelectronics Workshop (SNW) (2012), p. 2.
38. D.-Y. Cho, S. Tappertzhofen, R. Waser, and I. Valov, Nanoscale 5, 1781 (2013).
39. S. Tappertzhofen, I. Valov, T. Tsuruoka, T. Hasegawa, R. Waser, and M. Aono, ACS Nano 7, 6396 (2013).
40. S. Tappertzhofen, H. Muendelein, I. Valov, and R. Waser, Nanoscale 4, 3040 (2012).
41. T. Tsuruoka, T. Hasegawa, I. Valov, R. Waser, and M. Aono, AIP Adv. 3, 032114 (2013).
42. T. Tsuruoka, K. Terabe, T. Hasegawa, and M. Aono, Nanotechnology 22, 254013 (2011).
43. V. V. Afanas'ev, F. De Stefano, M. Houssa, A. Stesmans, L. Goux, K. Opsomer, C. Detavernier, J. A. Kittl, and M. Jurczak, Thin Solid Films 533, 34 (2013).
44. T. Nabatame, T. Yasuda, M. Nishizawa, M. Ikeda, T. Horikawa, and A. Toriumi, Jpn. J. Appl. Phys., Part 1 42, 7205 (2003).
45. K. Matsunaga, T. Tanaka, T. Yamamoto, and Y. Ikuhara, Phys. Rev. B 68, 085110 (2003).
46. L. Goux et al., Thin Solid Films 533, 29 (2013).
47. H.-P. Komsa, T. T. Rantala, and A. Pasquarello, Phys. Rev. B 86, 045112 (2012).
48. G. Makov and M. C. Payne, Phys. Rev. B 51, 4014 (1995).
49. N. Knorr, A. Bamedi, Z. Karipidou, R. Wirtz, M. Sarpasan, S. Rosselli, and G. Nelles, J. Appl. Phys. 114, 124510 (2013).
50. T. Tsuruoka, K. Terabe, T. Hasegawa, I. Valov, R. Waser, and M. Aono, Adv. Funct. Mater. 22, 70 (2012).
51. R. A. Miron and K. A. Fichthorn, J. Chem. Phys. 119, 6210 (2003).
52. I. Avramov, Europ. J. Glass Sci. Technol. B 48, 61 (2007).
53. I. Avramov, J. Non-Cryst. Solids 354, 1537 (2008).
54. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham, J. Electrochem. Soc. 140, 2427 (1993).
55. J. D. McBrayer, R. M. Swanson, and T. W. Sigmon, J. Electrochem Soc. 133, 1242 (1986).
56. N. Banno, T. Sakamoto, N. Iguchi, H. Sunamura, K. Terabe, T. Hasegawa, and M. Aono, IEEE Trans. Electron. Devices 55, 3283 (2008).
57. S. Menzel, U. Boettger, and R. Waser, J. Appl. Phys. 111, 014501 (2012).
58. I. Valov, R. Waser, J. R. Jameson, and M. N. Kozicki, Nanotechnology 22, 289502 (2011).
59. S. S. Peng, F. Zhuge, X. X. Chen, X. J. Zhu, B. L. Hu, L. Pan, B. Chen, and R. W. Li, Appl. Phys. Lett. 100(4), 072101 (2012).
60. S. Gao, C. Song, C. Chen, F. Zeng, and F. Pan, J. Phys. Chem. C 116, 17955 (2012).
61. Q. Liu, J. Sun, H. Lv, S. Long, K. Yin, N. Wan, Y. Li, L. Sun, and M. Liu, Adv. Mater. 24, 1844 (2012).
62. U. Celano et al., in: IEDM Technical Digest, IEEE International Electron Devices Meeting (2013), p. 574.
63. S. Menzel, I. Valov, R. Waser, N. Adler, J. van den Hurk, and S. Tappertzhofen, 5th IEEE International Memory Workshop (IMW 2013) (2013), p. 92.
64. I. Valov and G. Staikov, J. Solid State Electrochem. 17, 365 (2013).
65. T. Hasegawa, K. Terabe, T. Tsuruoka, and M. Aono, Adv. Mater. 24, 252 (2012).
66. K. Peppler, C. Reitz, and J. Janek, Appl. Phys. Lett. 93, 074104 (2008).
67. I. Valov, Chem. Electro. Chem. 1, 26 (2014).
68. J. J. Yang, D. B. Strukov, and D. R. Stewart, Nature Nanotechnol. 8, 13 (2013).
69. I. Valov and M. N. Kozicki, J. Phys. D, Appl. Phys. 46, 074005 (2013).
70. G. S. Kar et al., IEEE Symposium on VLSI Technology (2012), p. 157.
71. K. Xiong, J. Robertson, G. Pourtois, J. Petry, and M. Muller, J. Appl. Phys. 104, 6 (2008).
72. S. Privitera, G. Bersuker, B. Butcher, A. Kalantarian, S. Lombardo, C. Bongiorno, R. Geer, D. C. Gilmer, and P. D. Kirsch, Microelectron. Eng. 109, 75 (2013).
73. N. Capron, P. Broqvist, and A. Pasquarello, Appl. Phys. Lett. 91, 192905 (2007).
74. C. Tang and R. Ramprasad, Phys. Rev. B 81, 161201(R) (2010).
75. B. P. Uberuaga and X. M. Bai, J. Phys.: Condens. Matter 23, 435004 (2011).
76. K. McKenna and A. Shluger, Appl. Phys. Lett. 95, 3 (2009).
77. H. Zhu, C. Tang, L. R. C. Fonseca, and R. Ramprasad, J. Mater. Sci. 47, 7399 (2012).
78. L. Pantisano, V. V. Afanas'ev, S. Cimino, C. Adelmann, L. Goux, Y. Y. Chen, J. A. Kittl, D. Wouters, and M. Jurczak, Microelectron. Eng. 88, 1251 (2011).
79. O. Pirrotta, L. Larcher, M. Lanza, A. Padovani, M. Porti, M. Nafria, and G. Bersuker, J. Appl. Phys. 114(5), 134503 (2013).
80. G. Bersuker et al., Solid-State Electron. 65/66, 146 (2011).
81. L. Goux et al., Appl. Phys. Lett. 97, 243509 (2010).
82. L. Goux, Y. Y. Chen, L. Pantisano, X. P. Wang, G. Groeseneken, M. Jurczak, and D. J. Wouters, Electrochem. Solid State Lett. 13, G54 (2010).
83. S. R. Bradley, K. P. McKenna, and A. L. Shluger, Microelectron. Eng. 109, 346 (2013).
84. Y. Y. Chen et al., ECS Trans. 50, 3 (2013).
85. Z. Liang, R. Seung-Wook, A. Hazeghi, D. Duncan, B. Magyari-Kope, and Y. Nishi, Symposium on VLSI Technology, T106 (2013).
86. S. Zafar, H. Jagannathan, L. F. Edge, and D. Gupta, Appl. Phys. Lett. 98, 3 (2011).
87. N. Capron, P. Broqvist, and A. Pasquarello, Appl. Phys. Lett. 91 (2007).
88. E. Hildebrandt, J. Kurian, M. M. Mueller, T. Schroeder, H.-J. Kleebe, and L. Alff, Appl. Phys. Lett. 99, 112902 (2011).
89. R. Degraeve et al., Symposium on VLSI Technology, T98 (2013).
90. R. Degraeve et al., IEEE Symposium on VLSI Technology (2012).
91. K. Xiong, J. Robertson, M. C. Gibson, and S. J. Clark, Appl. Phys. Lett. 87 (2005).
92. G. Lucovsky, H. Seo, S. Lee, L. B. Fleming, M. D. Ulrich, J. Luning, P. Lysaght, and G. Bersuker, Jpn. J. Appl. Phys. 46, 1899 (2007).
93. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo, and C. H. Tung, J. Appl. Phys. 98, 121301 (2005).
94. G. Bersuker et al., J. Appl. Phys. 110(12), 124518 (2011).
95. R. Degraeve, P. Roussel, L. Goux, D. Wouters, J. Kittl, L. Altimime, M. Jurczak, and G. Groeseneken, in: IEEE International Electron Devices Meeting (2010), p. 4.
96. F. M. Puglisi, L. Larcher, G. Bersuker, A. Padovani, and P. Pavan, IEEE Electron. Device Lett. 34, 387 (2013).
97. D. K. Belashchenko, Uspekh. Fiz. Nauk 169, 361 (1999).
98. D. Chandler and J. P. Garrahan, Annu. Rev. Phys. Chem. 61, 191 (2010).
99. A. Fantini et al., in: 5th IEEE International Memory Workshop (IMW) (2013), p. 30.
100. L. Goux et al., IEEE Symposium on VLSI Technology, (2012) p. 159.
101. S. Larentis, F. Nardi, S. Balatti, D. C. Gilmer, and D. Ielmini, IEEE Trans. Electron Devices 59, 2468 (2012).
102. L. Vandelli, A. Padovani, L. Larcher, and G. Bersuker, IEEE Trans. Electron Devices 60, 1754 (2013).
103. Y. Lu, B. Gao, Y. Fu, B. Chen, L. Liu, X. Liu, and J. Kang, IEEE Electron. Device Lett. 33, 306 (2012).
104. S. Menzel, S. Tappertzhofen, R. Waser, and I. Valov, Phys. Chem. Chem. Phys. 15, 6945 (2013).
105. L. Chi-Shuen, S. Yu, G. Ximeng, L. Jieying, W. Lan, and H. S. P. Wong, IEEE International Conference of Elec-tron Devices and Solid-state Circuits (EDSSC) (2013), p. 2.