Complementary role of field and temperature in triggering ON/OFF switching mechanisms in Hf/HfO2 Resistive RAM cells

IEEE Transactions on Electron Devices

Volumn 60, Issue 8, 2013, Pages 2471-2478

  Govoreanu, Bogdan ^a   Clima, Sergiu ^a   Radu, Iuliana P ^a,b   Chen, Yang Yin ^a,b   Wouters, Dirk J ^a,b   Jurczak, Malgorzata ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Cold switching; Electrothermal model; Resistive RAM (RRAM); Switching mechanism; Thermally induced variability

Indexed keywords

ELECTRO-THERMAL MODEL; ELECTROTHERMAL NUMERICAL MODELS; IMPACT OF TEMPERATURES; MATERIAL INFORMATION; RESISTIVE RAMS (RRAM); SWITCHING MECHANISM; TEMPERATURE DEPENDENT; THERMALLY-INDUCED VARIABILITY;

ELECTRON DEVICES; ELECTRONICS ENGINEERING;

ELECTRIC FIELDS;

EID: 84880903071     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2266357     Document Type: Article

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