Grain boundary-driven leakage path formation in HfO2 dielectrics

Solid-State Electronics

Volumn 65-66, Issue 1, 2011, Pages 146-150

  Bersuker, G ^a   Yum, J ^a   Vandelli, L ^a,b   Padovani, A ^a,b   Larcher, L ^a,b   Iglesias, V ^a,c   Porti, M ^a,c   Nafria M ^a,c   McKenna, K ^a,d,e   Shluger, A ^a,d,e   Kirsch, P ^a   Jammy, R ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

Conductive AFM; Grain boundaries; High k dielectrics; Trap assisted tunneling

Indexed keywords

AB INITIO CALCULATIONS; CHARGE STATE; CONDUCTIVE AFM; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONSTANT VOLTAGE STRESS; CURRENT FLOWS; CURRENT STRESS; ENERGY CHARACTERISTICS; HIGH-K DIELECTRICS; LEAKAGE PATHS; MIM CAPACITORS; REVERSIBLE ELECTRON TRAPPING; STRESS CURRENT; STRESS VOLTAGES; SUB-BANDS; TRAP ASSISTED TUNNELING;

ATOMIC FORCE MICROSCOPY; CALCULATIONS; DIELECTRIC MATERIALS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HAFNIUM OXIDES; MIM DEVICES; OXYGEN;

OXYGEN VACANCIES;

EID: 80054032521     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.06.031     Document Type: Conference Paper

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