Generic relevance of counter charges for cation-based nanoscale resistive switching memories

ACS Nano

Volumn 7, Issue 7, 2013, Pages 6396-6402

  Tappertzhofen, Stefan ^a,b   Valov, Ilia ^a,b,c   Tsuruoka, Tohru ^d   Hasegawa, Tsuyoshi ^d   Waser, Rainer ^a,b,c   Aono, Masakazu ^d  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b JARA FIT   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

counter charge; electrochemical metalization cell; electromotive force; redox reactions; ReRAM; silicon dioxide

Indexed keywords

COUNTER CHARGE; ELECTROCHEMICAL REACTIONS; METALIZATIONS; NONVOLATILE MEMORY CELLS; OXIDATION AND REDUCTION; RERAM; RESISTIVE SWITCHING MEMORY; WATER PARTIAL PRESSURE;

ELECTROMOTIVE FORCE; POSITIVE IONS; REDOX REACTIONS; REDUCTION; SILICA;

SWITCHING SYSTEMS;

NANOMATERIAL; SILICON DIOXIDE;

CHEMISTRY; DATA STORAGE DEVICE; DEVICE FAILURE ANALYSIS; DEVICES; EQUIPMENT DESIGN; IMPEDANCE; MATERIALS TESTING; NANOTECHNOLOGY; SIGNAL PROCESSING; STATIC ELECTRICITY; ULTRASTRUCTURE; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

COMPUTER STORAGE DEVICES; ELECTRIC IMPEDANCE; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; NANOSTRUCTURES; NANOTECHNOLOGY; SIGNAL PROCESSING, COMPUTER-ASSISTED; SILICON DIOXIDE; STATIC ELECTRICITY;

EID: 84880831000     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4026614     Document Type: Article

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