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Electrochemical and Solid-State Letters

Volumn 13, Issue 6, 2010, Pages

On the gradual unipolar and bipolar resistive switching of TiN\ HfO 2 \Pt Memory Systems

(7) Goux, L a Chen, Y Y a,b Pantisano, L a Wang, X P a Groeseneken, G a,b Jurczak, M a Wouters, D J a,b

a IMEC (Belgium)

b Katholieke Universiteit Leuven (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INTERMEDIATE RESISTANCE; MEMORY SYSTEMS; PARTIAL RECOVERY; PT-SYSTEMS; RESISTANCE CHANGE; RESISTIVE SWITCHING; RETENTION PROPERTIES; SIMPLE MODEL; SWITCHING MODES; UNIPOLAR SWITCHING; VACANCY DEFECTS;

DEFECTS; HAFNIUM COMPOUNDS; OXYGEN; PLATINUM; TITANIUM NITRIDE; VACANCIES;

SWITCHING;

EID: 77951190171 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3373529 Document Type: Article

Times cited : (107)

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