Hydrogen-induced resistive switching in TiN/ALD HfO 2/PEALD TiN RRAM device

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 483-485

  Chen, Yang Yin ^a,b   Goux, L ^a   Swerts, J ^a   Toeller, M ^a,c   Adelmann, C ^a   Kittl, J ^a   Jurczak, M ^a   Groeseneken, G ^a   Wouters, D J ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Tokyo Electron (TEL)   (Belgium)

Author keywords

Bipolar switching; HfO 2; plasma enhanced atomic layer deposition (PEALD) TiN; plasma treatment; resistive switching memory (RRAM)

Indexed keywords

H-BASED; HFO 2; HYDROGEN PLASMA TREATMENTS; PARTIAL REDUCTION; PLASMA TREATMENT; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESET VOLTAGE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING PERFORMANCE; SWITCHING PROPERTIES; THERMAL ANNEALING TREATMENT;

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; HYDROGEN; PLASMA APPLICATIONS; STOICHIOMETRY; SWITCHING; TINNING;

TITANIUM NITRIDE;

EID: 84862828826     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185212     Document Type: Article

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