Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics

IEEE Transactions on Electron Devices

Volumn 60, Issue 5, 2013, Pages 1754-1762

  Vandelli, Luca ^a   Padovani, Andrea ^a,b   Larcher, Luca ^a   Bersuker, Gennadi ^c  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b INTERMECH MORE Center   (Italy)

^c SEMATECH   (United States)

Author keywords

Breakdown statistics; Dielectric breakdown; HfO2; RRAM; TDDB; Transistor's reliability; Trap assisted tunneling

Indexed keywords

CONSTANT VOLTAGE STRESS; HFO2; RRAM; STRESS-INDUCED BREAKDOWN; TDDB; TIME-DEPENDENT DIELECTRIC BREAKDOWN; TRANSITION-METAL OXIDES; TRAP ASSISTED TUNNELING;

CRYSTALLINE MATERIALS; DEFECTS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; HAFNIUM OXIDES; MIM DEVICES; OXIDE FILMS; OXIDES;

LEAKAGE CURRENTS;

EID: 84884800271     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2255104     Document Type: Article

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