-
1
-
-
5244280643
-
-
0022-3697, 10.1016/0022-3697(66)90118-1
-
B. E. Deal, E. H. Snow, and C. A. Mead, J. Phys. Chem. Solids 0022-3697 27, 1873 (1966). 10.1016/0022-3697(66)90118-1
-
(1966)
J. Phys. Chem. Solids
, vol.27
, pp. 1873
-
-
Deal, B.E.1
Snow, E.H.2
Mead, C.A.3
-
2
-
-
33845392078
-
2
-
DOI 10.1063/1.1436299
-
V. V. Afanas'ev, M. Houssa, A. Stesmans, and M. M. Heyns, J. Appl. Phys. 0021-8979 91, 3079 (2002). 10.1063/1.1436299 (Pubitemid 34598779)
-
(2002)
Journal of Applied Physics
, vol.91
, Issue.5
, pp. 3079
-
-
Afanas'ev, V.V.1
Houssa, M.2
Stesmans, A.3
Heyns, M.M.4
-
4
-
-
26744453610
-
-
0556-2805, 10.1103/PhysRevB.32.6968
-
J. Tersoff, Phys. Rev. B 0556-2805 32, 6968 (1985). 10.1103/PhysRevB.32. 6968
-
(1985)
Phys. Rev. B
, vol.32
, pp. 6968
-
-
Tersoff, J.1
-
5
-
-
22644451116
-
-
1071-1023, 10.1116/1.590839
-
W. Mönch, J. Vac. Sci. Technol. B 1071-1023 17, 1867 (1999). 10.1116/1.590839
-
(1999)
J. Vac. Sci. Technol. B
, vol.17
, pp. 1867
-
-
Mönch, W.1
-
6
-
-
75649105386
-
-
0021-8979, 10.1063/1.3275051
-
W. Mönch, J. Appl. Phys. 0021-8979 107, 013706 (2010). 10.1063/1.3275051
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 013706
-
-
Mönch, W.1
-
7
-
-
0034187380
-
-
1071-1023, 10.1116/1.591472
-
J. Robertson, J. Vac. Sci. Technol. B 1071-1023 18, 1785 (2000) 10.1116/1.591472
-
(2000)
J. Vac. Sci. Technol. B
, vol.18
, pp. 1785
-
-
Robertson, J.1
-
8
-
-
31044455312
-
High dielectric constant gate oxides for metal oxide Si transistors
-
DOI 10.1088/0034-4885/69/2/R02, PII S0034488506721856
-
J. Robertson, Rep. Prog. Phys. 0034-4885 69, 327 (2006). 10.1088/0034-4885/69/2/R02 (Pubitemid 43121643)
-
(2006)
Reports on Progress in Physics
, vol.69
, Issue.2
, pp. 327-396
-
-
Robertson, J.1
-
9
-
-
77949673104
-
-
0003-6951, 10.1063/1.3353993
-
C. L. Hinkle, R. V. Galatege, R. A. Chapman, E. M. Vogel, H. M. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, Appl. Phys. Lett. 0003-6951 96, 103502 (2010). 10.1063/1.3353993
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 103502
-
-
Hinkle, C.L.1
Galatege, R.V.2
Chapman, R.A.3
Vogel, E.M.4
Alshareef, H.M.5
Freeman, C.6
Wimmer, E.7
Niimi, H.8
Li-Fatou, A.9
Shaw, J.B.10
Chambers, J.J.11
-
10
-
-
0342955088
-
-
0031-9007, 10.1103/PhysRevLett.84.6078
-
R. Y. Tung, Phys. Rev. Lett. 0031-9007 84, 6078 (2000) 10.1103/PhysRevLett.84.6078
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 6078
-
-
Tung, R.Y.1
-
11
-
-
0035834318
-
-
0927-796X, 10.1016/S0927-796X(01)00037-7
-
R. Y. Tung, Mater. Sci. Eng. R. 0927-796X 35, 1 (2001). 10.1016/S0927-796X(01)00037-7
-
(2001)
Mater. Sci. Eng. R.
, vol.35
, pp. 1
-
-
Tung, R.Y.1
-
12
-
-
33646891317
-
Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
-
DOI 10.1016/j.mser.2006.04.001, PII S0927796X06000258
-
See, e.g., M. Houssa, L. Pantisano, L. -A. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, and M. M. Heyns, Mater. Sci. Eng. R. 0927-796X 51, 37 (2006). 10.1016/j.mser.2006.04.001 (Pubitemid 43783301)
-
(2006)
Materials Science and Engineering R: Reports
, vol.51
, Issue.4-6
, pp. 37-85
-
-
Houssa, M.1
Pantisano, L.2
Ragnarsson, L.-A.3
Degraeve, R.4
Schram, T.5
Pourtois, G.6
De Gendt, S.7
Groeseneken, G.8
Heyns, M.M.9
-
13
-
-
21244463151
-
Electron photoemission from conducting nitrides (TiNx, TaNx) into SiO2 and HfO2
-
DOI 10.1063/1.1935041, 232902
-
V. V. Afanas'ev, A. Stesmans, L. Pantisano, and T. Schram, Appl. Phys. Lett. 0003-6951 86, 232902 (2005). 10.1063/1.1935041 (Pubitemid 40890884)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.23
, pp. 1-3
-
-
Afanas'ev, V.V.1
Stesmans, A.2
Pantisano, L.3
Schram, T.4
-
14
-
-
77958503301
-
-
1099-0062, 10.1149/1.3489079
-
P. -S. Chen, H. -Y. Lee, Y. -S. Chen, P. -Y. Gu, F. Chen, and M. -J. Tsai, Electrochem. Solid-State Lett. 1099-0062 13, H423 (2010). 10.1149/1.3489079
-
(2010)
Electrochem. Solid-State Lett.
, vol.13
, pp. 423
-
-
Chen, P.-S.1
Lee, H.-Y.2
Chen, Y.-S.3
Gu, P.-Y.4
Chen, F.5
Tsai, M.-J.6
-
16
-
-
0014789335
-
-
0021-8979, 10.1063/1.1659238
-
R. J. Powell, J. Appl. Phys. 0021-8979 41, 2424 (1970). 10.1063/1.1659238
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 2424
-
-
Powell, R.J.1
-
17
-
-
79956051787
-
2
-
DOI 10.1063/1.1495088
-
V. V. Afanas'ev, A. Stesmans, A. Chen, F. Shi, and S. A. Campbell, Appl. Phys. Lett. 0003-6951 81, 1053 (2002). 10.1063/1.1495088 (Pubitemid 34945766)
-
(2002)
Applied Physics Letters
, vol.81
, Issue.6
, pp. 1053
-
-
Afanas'ev, V.V.1
Stesmans, A.2
Chen, F.3
Shi, X.4
Campbell, S.A.5
-
18
-
-
34648818999
-
2 by extended x-ray absorption fine-structure spectroscopy
-
DOI 10.1063/1.2789180
-
P. S. Lysaght, J. C. Woicik, M. A. Sahiner, B. H. Lee, and R. Jammy, Appl. Phys. Lett. 0003-6951 91, 122910 (2007). 10.1063/1.2789180 (Pubitemid 47461928)
-
(2007)
Applied Physics Letters
, vol.91
, Issue.12
, pp. 122910
-
-
Lysaght, P.S.1
Woicik, J.C.2
Alper Sahiner, M.3
Lee, B.-H.4
Jammy, R.5
-
19
-
-
34547437348
-
Near-edge optical absorption behavior of sputter deposited hafnium dioxide
-
DOI 10.1063/1.2750406
-
E. E. Hoppe, R. S. Sorbello, and C. R. Aita, J. Appl. Phys. 0021-8979 101, 123534 (2007). 10.1063/1.2750406 (Pubitemid 47158122)
-
(2007)
Journal of Applied Physics
, vol.101
, Issue.12
, pp. 123534
-
-
Hoppe, E.E.1
Sorbello, R.S.2
Aita, C.R.3
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