Skin dominance of the dielectric-electronic-phononic-photonic attribute of nanoscaled silicon

Surface Science Reports

Volumn 68, Issue 3-4, 2013, Pages 418-445

  Pan, Likun ^a   Xu, Shiqing ^b   Liu, Xinjuan ^a   Qin, Wei ^a   Sun, Zhuo ^a   Zheng, Weitao ^c   Sun, Chang Q ^b,d  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b CHINA JILIANG UNIVERSITY   (China)

^c JILIN UNIVERSITY   (China)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Core level shift; Dielectric constant; Nanostructures; Photoabsorption; Photoluminescence; Raman shift; Silicon; Stokes shift

Indexed keywords

BINDING ENERGY; BOND LENGTH; CORE LEVELS; DANGLING BONDS; DIELECTRIC RELAXATION; ELECTRON-PHONON INTERACTIONS; ELECTRONS; ENERGY GAP; NANOSTRUCTURES; PASSIVATION; PERMITTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON;

CORE LEVEL SHIFTS; ELECTRON LOCALIZATIONS; PHOTOABSORPTIONS; PHOTONIC PROPERTIES; RAMAN SHIFT; STOKES SHIFT; SURFACE PASSIVATION; TUNABLE DIELECTRICS;

POROUS SILICON;

EID: 84887970728     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfrep.2013.10.001     Document Type: Review

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