A new method for deposition of cubic Ta diffusion barrier for Cu metallization

Thin Solid Films

Volumn 434, Issue 1-2, 2003, Pages 126-129

  Yuan, Z L ^a   Zhang, D H ^a   Li, C Y ^a,b   Prasad, K ^a   Tan, C M ^a   Tang, L J ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Ta; Amorphous layer; Copper metallization; Diffusion barrier; Plasma pre treatment

Indexed keywords

COPPER; DEPOSITION; DIFFUSION; METALLIZING; TANTALUM;

DIFFUSION BARRIERS;

THIN FILMS;

EID: 0037939731     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00532-7     Document Type: Article

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