Modelling and simulation for dielectric constant of aerogel

Microelectronic Engineering

Volumn 54, Issue 3-4, 2000, Pages 295-301

  Xiao, Xia ^a   Streiter, Reinhard ^a   Ruan, Gang ^b   Song, Renru ^b   Otto, Thomas ^a   Gessner, Thomas ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC PROPERTIES OF SOLIDS; MATHEMATICAL MODELS; PERMITTIVITY; PORE SIZE; POROSITY; ULSI CIRCUITS;

DIELECTRIC STRENGTH;

AEROGELS;

EID: 0034517428     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00257-4     Document Type: Article

References (14)

1. The National Technology Roadmap for Semiconductors. 1997;Semiconductor Industry Association, San Jose, CA.
2. Bohr M.T. IEEE International Electron Device Meeting Technical Digest. 1995;241.
3. Edelstein D.C., Sai-Halasz G.A., et al. IBM J. Res. Dev. 39:(4):1995;383.
4. Murarka S. Solid State Technology. 39:(3):1996;83.
5. Jin C., Luttmer J.D., Smith D.M., et al. MRS Bulletin. Oct:1997;39.
6. Hrubesh L.H., Poco J.F. J. Non-Crystal Solids. 46:1995;188.
7. Cho C.C., Smith D.M., et al. Mater. Chem. Phys. 42:1995;91.
8. Jo M.H., Park H.H., et al. J. Appl. Phys. 82:1997;1299.
9. List R.S., Singh A., et al. MRS Bulletin. Oct:1997;61.
10. Hrubesh L.W., Keene L.E., et al. J. Mater. Res. 8:(7):1993;1763.
11. Nitta S.V., Pisupatti V., et al. J. Vacuum Science Technology. B17:(1):1999;205.
12. Shieh B., Saraswat K., Deal M., et al. Solid State Technology. Feb:1999;51.
13. Shieh B., Saraswat K., List S., et al. IEEE Electron Dev. Lett. 19:(1):1998;16.
14. Qin S., Zhou Y.Z., Chan C., et al. IEEE Electron Dev. Lett. 19:(11):1998;420.