The quantum size effects on the surface potential of nanocrystalline silicon thin film transistors

Thin Solid Films

Volumn 518, Issue 12, 2010, Pages 3396-3401

  Mao, Ling Feng ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

Electronic devices; Nanocrystalline silicon; Quantum effects; Surface potential; Thin film transistors

Indexed keywords

BAND GAPS; DIELECTRIC CONSTANTS; ELECTRONIC DEVICE; ELECTRONIC DEVICES; GRAIN SIZE; MEDIUM SIZE; NANO-CRYSTALLINE SILICON THIN FILMS; NUMERICAL CALCULATION; QUANTUM EFFECTS; QUANTUM SIZE EFFECTS; SMALL SIZE; STRONG INVERSION;

ENERGY GAP; NANOCRYSTALLINE SILICON; PERMITTIVITY; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WIRES; SURFACE POTENTIAL; SURFACE PROPERTIES; THERMOELECTRIC EQUIPMENT; THIN FILM TRANSISTORS; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77649229297     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.143     Document Type: Article

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