Electronic band structure and optical properties of silicon nanoporous pillar array

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 10, 2009, Pages 1882-1885

  Xu, Hai Jun ^a,b   Li, De Yao ^a   Li, Xin Jian ^b  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

^b ZHENGZHOU UNIVERSITY   (China)

Author keywords

Absorption; Dielectric function; Electronic band structure; Silicon nanoporous pillar array

Indexed keywords

ABSORPTION THEORY; BAND-GAP SEMICONDUCTORS; DIELECTRIC FUNCTION; ELECTRONIC BAND STRUCTURE; EXPERIMENTAL DATA; FERRIC NITRATE; HIERARCHICAL STRUCTURES; HYDROTHERMALLY; KRAMERS-KRONIG RELATIONS; OPTICAL MEASUREMENT; OPTICAL PARAMETER; QUANTUM CONFINEMENT EFFECTS; SILICON NANOCRYSTALLITES; SILICON NANOPOROUS PILLAR ARRAY; SINGLE CRYSTAL SILICON; STRUCTURAL COMPOSITES; SUB-BANDS;

ABSORPTION; BAND STRUCTURE; ELECTRON MOBILITY; HYDROFLUORIC ACID; NANOCRYSTALLITES; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS;

SILICON WAFERS;

EID: 70249140232     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.08.019     Document Type: Article

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