Porosity gradient resulting from localised formation of porous silicon: the effect on waveguiding

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 431-436

  Charrier, J ^a   Guendouz, M ^a   Haji, L ^a   Joubert, P ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLOGRAPHY; ELECTRIC CURRENTS; ELECTROCHEMISTRY; ETCHING; INTERFACES (MATERIALS); LIGHT PROPAGATION; OPTICAL WAVEGUIDES; POROSITY; REFRACTIVE INDEX; SUBSTRATES; SURFACE REACTIONS;

ANODISATION; CRYSTALLOGRAPHIC DIRECTIONS; INTERFACE REACTION AREA; MASKING LAYER; POROSITY GRADIENT; POROUS SILICON FORMATION; WAVEGUIDING;

POROUS SILICON;

EID: 0034427966     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<431::AID-PSSA431>3.0.CO;2-7     Document Type: Article

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