Quantum confinement in nanoscale silicon: The correlation of size with bandgap and luminescence

Solid State Communications

Volumn 105, Issue 5, 1998, Pages 317-322

  Von Behren, J ^a,b   Van Buuren, T ^a,c   Zacharias, M ^a,d   Chimowitz, E H ^a   Fauchet, P M ^a,e  

^a University of Rochester ^*  (United States)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d OTTO VON GUERICKE UNIVERSITY   (Germany)

^e UNIVERSITY OF ROCHESTER   (United States)

Author keywords

A. nanostructures; E. light absorption and reflection; E. luminescence

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; ELECTRON ENERGY LEVELS; ENERGY GAP; LIGHT ABSORPTION; LUMINESCENCE OF SOLIDS; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; POROSITY; QUANTUM THEORY; REFLECTION;

BANDGAP; QUANTUM CONFINEMENT; STOKES SHIFT;

SEMICONDUCTING SILICON;

EID: 0031995463     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10099-0     Document Type: Article

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