Effects of thermal oxidation on the photoluminescence properties of porous silicon

Journal of Luminescence

Volumn 130, Issue 4, 2010, Pages 682-687

  Nakamura, T ^a   Ogawa, T ^a   Hosoya, N ^a   Adachi, S ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

Photoluminescence; Porous silicon; Thermal oxidation

Indexed keywords

ANNEALING TEMPERATURES; HIGH QUALITY; PHOTOLUMINESCENCE PROPERTIES; PL INTENSITY; PL PROPERTY; THERMAL OXIDATION; THERMALLY OXIDIZED; XPS;

ANNEALING; OXIDATION; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SILICON OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

POROUS SILICON;

EID: 74149083985     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2009.11.018     Document Type: Article

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