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Volumn 115, Issue 47, 2011, Pages 23338-23343

Band gap modulation of the IV, III-V, and II-VI semiconductors by controlling the solid size and dimension and the temperature of operation

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC LAYER; BANDGAP MODULATION; COHESIVE ENERGIES; CORE-SHELL; ENERGY BAND; II-VI SEMICONDUCTOR; SIZE REDUCTIONS; SIZE TUNABILITY; TEMPERATURE DEPENDENCE; ZNO; ZNS CRYSTALS;

EID: 82155179273     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp209933v     Document Type: Article
Times cited : (23)

References (66)
  • 33
    • 0021636405 scopus 로고
    • Brus, L. J. Lumin. 1984, 31-32, 381-384
    • (1984) J. Lumin. , vol.3132 , pp. 381-384
    • Brus, L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.