Dielectric relaxation and transition of porous silicon

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2695-2700

  Pan, L K ^a   Huang, H T ^a   Sun, Chang Q ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE MEASUREMENT; FREQUENCIES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PERMITTIVITY; THERMAL EFFECTS; THERMAL EXPANSION;

SEMICIRCLES;

POROUS SILICON;

EID: 0042924330     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1594821     Document Type: Article

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