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Volumn 4, Issue 4, 2012, Pages 1308-1311

Size-suppressed dielectrics of Ge nanocrystals: Skin-deep quantum entrapment

(5) Goh, Eunice S M a,b Chen, T P a Yang, H Y b Liu, Y c Sun, C Q a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN (Singapore)

c UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BEHAVIOR; DIELECTRIC SUPPRESSION; ELECTRON POLARIZATION; GE NANOCRYSTALS; NANOSTRUCTURED SEMICONDUCTOR;

GERMANIUM; NANOCRYSTALS; POLARIZATION;

DIELECTRIC MATERIALS;

GERMANIUM; NANOPARTICLE;

ARTICLE; CHEMISTRY; QUANTUM THEORY; SURFACE PROPERTY; THEORETICAL MODEL;

GERMANIUM; MODELS, THEORETICAL; NANOPARTICLES; QUANTUM THEORY; SURFACE PROPERTIES;

EID: 84857202735 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c2nr11154c Document Type: Article

Times cited : (7)

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