Size- and strain-dependent electronic structures in H-passivated Si [112] nanowires

Journal of Physical Chemistry C

Volumn 112, Issue 40, 2008, Pages 15680-15683

  Huang, Li ^a,b   Lu, Ning ^a,c   Yan, Jia An ^b   Chou, M Y ^b   Wang, Cai Zhuang ^a,c   Ho, Kai Ming ^a,c  

^a U S DEPARTMENT OF ENERGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC GEOMETRIES; CROSS SECTIONS; DIRECT BAND GAPS; ELECTRONIC BAND STRUCTURES; ENERGY DIFFERENCES; FIRST-PRINCIPLES CALCULATIONS; FUNDAMENTAL BAND GAPS; GLOBAL SEARCHES; INDIRECT BAND GAPS; SI NANOWIRES; UNIAXIAL COMPRESSIVE STRESSES; WIRE SIZES;

ASPECT RATIO; ELECTRIC WIRE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ALLOYS; GENETIC ALGORITHMS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PASSIVATION; SILICON; WIRE;

DENSITY FUNCTIONAL THEORY;

EID: 54849416457     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp802591v     Document Type: Article

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