Surface investigations of nanostructured porous silicon

Thin Solid Films

Volumn 318, Issue 1-2, 1998, Pages 113-116

  Galiy, P V ^a   Lesiv, T I ^a   Monastyrskii, L S ^a   Nenchuk, T M ^a   Olenych, I B ^a  

^a IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

Author keywords

Auger electron spectroscopy; Photoluminescence; Porous silicon; Surface

Indexed keywords

AMORPHOUS FILMS; AUGER ELECTRON SPECTROSCOPY; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SURFACE STRUCTURE;

THERMOSTIMULATED EXOELECTRON EMISSION (TSEE);

POROUS SILICON;

EID: 0032047037     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01176-0     Document Type: Article

References (7)

1. R. Collins, P. Fauchet, M. Tischler, Phys. Today 1 (1997) 25.
2. V. Lehmann, V. Gosele, Appl. Phys. Lett. 58 (1990) 856.
3. M. Born, E. Wolf, Principles of Optics, Pergamon, Oxford, 1968.
4. L.E. Davis, N.C. MacDonald, P.W. Palmberg, G.E. Riach, R.E. Weber, Handbook of Auger Electron Spectroscopy, Phys. Elect. Divis., Perkin-Elmer, MN, 1978.
5. M.Y. Barbashow, V.A. Gorelik, O.D. Protopopov, Electron Tech. Ser. 8 2-3 (80-81) (1980) 141, (SU).
6. M.P. Seah, J. Vac. Sci. Technol. 17 (1980) 16.
7. I.V. Krylova, Phys. Tech. Semicond. 30 (1996) 415.