Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 583-587

  Pan, L K ^a   Ee, Y K ^a   Sun, C Q ^a   Yu, G Q ^a   Zhang, Q Y ^a   Tay, B K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GIBBS FREE ENERGY; HAMILTONIANS; NANOSTRUCTURED MATERIALS; OXIDATION; PARTICLE SIZE ANALYSIS; PASSIVATION; PERMITTIVITY; PHOTOLUMINESCENCE; REFLECTION; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP EXPANSION; DIELECTRIC SUPRESSION; PLASMA FLUORINATION; QUANTUM CONFINEMENT (QC);

POROUS SILICON;

EID: 2442532739     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1651108     Document Type: Article

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