Electronic control of friction in silicon pn junctions

Science

Volumn 313, Issue 5784, 2006, Pages 186-

  Park, Jeong Young ^a   Ogletree, D F ^a   Thiel, P A ^b   Salmeron, M ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b IOWA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALS; MICROSCOPES; SEMICONDUCTOR JUNCTIONS; SILICON;

CHARGE ACCUMULATION; CHARGE DEPLETION; ELECTRONIC CONTROL;

FRICTION;

NITROGEN; QUANTUM DOT; SILICON; TITANIUM;

ATOMIC FORCE MICROSCOPY; FRICTION; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CALCULATION; DENSITY; DEVICE; ELASTICITY; ELECTRIC FIELD; ELECTRIC POTENTIAL; ENERGY; ENERGY TRANSFER; FRICTION; GEOMETRY; HEAT; KINETICS; MOTION; PHONON; PRIORITY JOURNAL; REPRODUCIBILITY; SCIENCE; SEMICONDUCTOR; TRIBOLOGY; VELOCITY; VIBRATION;

EID: 33746013198     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1125017     Document Type: Article

References (10)

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10. This work was supported by the Director, Office of Energy Research, Office of Basic Energy Sciences, Materials Sciences Division, of the U.S. Department of Energy through the Lawrence Berkeley National Laboratory, contract no. DE-AC02-05CH11231, and through the Ames Laboratory, contract no. W-40S-Eng-82. We thank R. J. Phaneuf (University of Maryland) for kindly providing the patterned Si samples.