Comparative investigation of TaN and SiCN barrier layer for Cu/ultra low k integration

Thin Solid Films

Volumn 504, Issue 1-2, 2006, Pages 265-268

  Yang, L Y ^a,b   Zhang, D H ^a   Li, C Y ^b   Liu, R ^d   Lu, P W ^c   Foo, P D ^c   Wee, A T S ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Cu metallization; SiCN; TaN; Ultra low k polymer

Indexed keywords

CRYSTAL STRUCTURE; INTEGRATION; POROUS MATERIALS; SILICON COMPOUNDS; TANTALUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

CU METALLIZATION; SICN; ULTRA LOW K POLYMER;

DIELECTRIC MATERIALS;

EID: 33644916364     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.09.166     Document Type: Conference Paper

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