-
1
-
-
33748634908
-
Nanowire-based one-dimensional electronics
-
DOI 10.1016/S1369-7021(06)71651-0, PII S1369702106716510
-
Thelander C et al 2006 Mater. Today 9 28 (Pubitemid 44380402)
-
(2006)
Materials Today
, vol.9
, Issue.10
, pp. 28-35
-
-
Thelander, C.1
Agarwal, P.2
Brongersma, S.3
Eymery, J.4
Feiner, L.F.5
Forchel, A.6
Scheffler, M.7
Riess, W.8
Ohlsson, B.J.9
Gosele, U.10
Samuelson, L.11
-
3
-
-
51949101127
-
-
Jiang Y, Liow T Y, Singh N, Tan L H, Lo G Q, Chan D S H and Kwong D L 2008 Symp. on VLSl Technology Digest of Technical Papers (Piscataway, NJ: IEEE) pp 34-5
-
(2008)
Symp. on VLSl Technology Digest of Technical Papers
, pp. 34-35
-
-
Jiang, Y.1
Liow, T.Y.2
Singh, N.3
Tan, L.H.4
Lo, G.Q.5
Chan, D.S.H.6
Kwong, D.L.7
-
4
-
-
77954277814
-
-
Li M, Yeo K H, Suk S D, Yeoh Y Y, Kim D-W, Chung T Y, Oh K S and Lee W-S 2009 Proc. VLSI Symp. (Piscataway, NJ: IEEE) pp 94-5
-
(2009)
Proc. VLSI Symp.
, pp. 94-95
-
-
Li, M.1
Yeo, K.H.2
Suk, S.D.3
Yeoh, Y.Y.4
Kim, D.-W.5
Chung, T.Y.6
Oh, K.S.7
Lee, W.-S.8
-
7
-
-
33845398273
-
One-dimensional germanium nanowires for future electronics
-
DOI 10.1007/s10876-006-0081-x
-
Yu B, Sun X H, Calebotta G A, Dholakia G R and Meyyappan M 2006 J. Cluster Sci. 17 579 (Pubitemid 44893111)
-
(2006)
Journal of Cluster Science
, vol.17
, Issue.4
, pp. 579-597
-
-
Yu, B.1
Sun, X.H.2
Calebotta, G.A.3
Dholakia, G.R.4
Meyyappan, M.5
-
8
-
-
34249944427
-
Fabrication of fully transparent nanowire transistors for transparent and flexible electronics
-
DOI 10.1038/nnano.2007.151, PII NNANO2007151
-
Ju J, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks T J and Janes D M 2007 Nature Nanotechnol. 2 389 (Pubitemid 46878166)
-
(2007)
Nature Nanotechnology
, vol.2
, Issue.6
, pp. 378-384
-
-
Ju, S.1
Facchetti, A.2
Xuan, Y.3
Liu, J.4
Ishikawa, F.5
Ye, P.6
Zhou, C.7
Marks, T.J.8
Janes, D.B.9
-
10
-
-
33144458431
-
Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors
-
DOI 10.1088/0957-4484/17/5/018, PII S0957448406101981
-
Cha H-Y, Wu H, Chandrasekhar M, Choi Y C, Chae S, Koley G and Spencer M 2006 Nanotechnology 17 1264 (Pubitemid 43269415)
-
(2006)
Nanotechnology
, vol.17
, Issue.5
, pp. 1264-1271
-
-
Cha, H.-Y.1
Wu, H.2
Chandrashekhar, M.3
Choi, Y.C.4
Chae, S.5
Koley, G.6
Spencer, M.G.7
-
13
-
-
84865108138
-
-
10.3938/jkps.55.1162 0374-4884
-
Yu Y S, Lee S H, Kim D S, Jung Y C, Hwang S W and Ahn D 2009 J. Korean Phys. Soc. 55 1162
-
(2009)
J. Korean Phys. Soc.
, vol.55
, pp. 1162
-
-
Yu, Y.S.1
Lee, S.H.2
Kim, D.S.3
Jung, Y.C.4
Hwang, S.W.5
Ahn, D.6
-
15
-
-
42549151657
-
A compact analytical current conduction model for a depletion-mode n-type nanowire field-effect transistor with a bottom-gate structure
-
DOI 10.1088/0268-1242/23/3/035025, PII S0268124208592303
-
Yu Y S, Lee S H, Oh J H, Kim H J, Hwang S W and Ahn D 2008 Semicond. Sci. Technol. 23 035025 (Pubitemid 351588034)
-
(2008)
Semiconductor Science and Technology
, vol.23
, Issue.3
, pp. 035025
-
-
Yu, Y.S.1
Lee, S.H.2
Oh, J.H.3
Kim, H.J.4
Hwang, S.W.5
Ahn, D.6
-
16
-
-
33845726161
-
Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique
-
DOI 10.1063/1.2397383
-
Motayed A, Davydov A V, Melngailis J and Mohammad S N 2006 J. Appl. Phys. 100 114310 (Pubitemid 46012237)
-
(2006)
Journal of Applied Physics
, vol.100
, Issue.11
, pp. 114310
-
-
Motayed, A.1
He, M.2
Davydov, A.V.3
Melngailis, J.4
Mohammad, S.N.5
-
17
-
-
32044458180
-
Realization of a silicon nanowire vertical surround-gate field-effect transistor
-
DOI 10.1002/smll.200500181
-
Schmidt V, Riel H, Senz S, Karg S, Riess W and Gösele U 2006 Small 2 85 (Pubitemid 43197999)
-
(2006)
Small
, vol.2
, Issue.1
, pp. 85-88
-
-
Schmidt, V.1
Riel, H.2
Senz, S.3
Karg, S.4
Riess, W.5
Gosele, U.6
-
19
-
-
33744737932
-
Field-effect transistor based on β-SiC nanowire
-
DOI 10.1109/LED.2006.874219
-
Zhou W M, Fang F, Hou Z Y, Yan L J and Zhang Y F 2006 IEEE Trans. Electron Devices Lett. 27 463 (Pubitemid 43821739)
-
(2006)
IEEE Electron Device Letters
, vol.27
, Issue.6
, pp. 463-465
-
-
Zhou, W.M.1
Fang, F.2
Hou, Z.Y.3
Yan, L.J.4
Zhang, Y.F.5
-
20
-
-
17044428578
-
Fabrication and electrical characteristics of high-performance ZnO nanorod field-effect transistors
-
DOI 10.1063/1.1821648
-
Park W I, Kim J S, Yi G-C, Bae M H and Lee H-J 2004 Appl. Phys. Lett. 85 5052 (Pubitemid 40715211)
-
(2004)
Applied Physics Letters
, vol.85
, Issue.21
, pp. 5052-5054
-
-
Park, W.I.1
Kim, J.S.2
Yi, G.-C.3
Bae, M.H.4
Lee, H.-J.5
-
21
-
-
23444437920
-
Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors
-
DOI 10.1088/0957-4484/16/9/011, PII S0957448405987631
-
Koo S M, Edelstein M D, Li Q, Ritchter C A and Vogel E M 2005 Nanotechnology 16 1482 (Pubitemid 41107798)
-
(2005)
Nanotechnology
, vol.16
, Issue.9
, pp. 1482-1485
-
-
Koo, S.-M.1
Edelstein, M.D.2
Li, Q.3
Richter, C.A.4
Vogel, E.M.5
-
25
-
-
84864703494
-
-
10.1021/nl3011676
-
Tang W, Dayeh S A, Picraux S T, Huang J Y and Tu K N 2012 Nano Lett. 12 3979
-
(2012)
Nano Lett.
, vol.12
, pp. 3979
-
-
Tang, W.1
Dayeh, S.A.2
Picraux, S.T.3
Huang, J.Y.4
Tu, K.N.5
-
27
-
-
77949445771
-
-
10.1021/nl903125m
-
Egard M, Johansson S, Johansson A-C, Persson K-M, Dey A W, Borg B M, Thelander C, Wernersson L-E and Lind E 2010 Nano Lett. 10 809
-
(2010)
Nano Lett.
, vol.10
, pp. 809
-
-
Egard, M.1
Johansson, S.2
Johansson, A.-C.3
Persson, K.-M.4
Dey, A.W.5
Borg, B.M.6
Thelander, C.7
Wernersson, L.-E.8
Lind, E.9
-
28
-
-
79954522582
-
-
10.1021/nl103278a
-
Trivedi K, Yuk H, Floresca H C, Kim M J and Hu W 2011 Nano Lett. 11 1412
-
(2011)
Nano Lett.
, vol.11
, pp. 1412
-
-
Trivedi, K.1
Yuk, H.2
Floresca, H.C.3
Kim, M.J.4
Hu, W.5
-
29
-
-
67651202704
-
-
10.1021/nn900284b
-
Colli A, Tahraoui A, Fasoli A, Kivioja J M, Milne W I and Ferrari A C 2009 ACS Nano 3 1587
-
(2009)
ACS Nano
, vol.3
, pp. 1587
-
-
Colli, A.1
Tahraoui, A.2
Fasoli, A.3
Kivioja, J.M.4
Milne, W.I.5
Ferrari, A.C.6
-
30
-
-
58449095112
-
-
10.1021/nl8022059
-
Ho T-T, Wang Y, Eichfeld S, Lew K-K, Liu B, Mohney S E, Redwing J M and Mayer T S 2008 Nano Lett. 8 4359
-
(2008)
Nano Lett.
, vol.8
, pp. 4359
-
-
Ho, T.-T.1
Wang, Y.2
Eichfeld, S.3
Lew, K.-K.4
Liu, B.5
Mohney, S.E.6
Redwing, J.M.7
Mayer, T.S.8
-
36
-
-
2442509519
-
-
10.1109/TNANO.2003.820518 1536-125X
-
Guo J, Wang J, Polizzi E, Datta S and Lundstrom M S 2003 IEEE Trans. Nanotechnol. 2 329
-
(2003)
IEEE Trans. Nanotechnol.
, vol.2
, pp. 329
-
-
Guo, J.1
Wang, J.2
Polizzi, E.3
Datta, S.4
Lundstrom, M.S.5
-
42
-
-
56649095943
-
-
10.1109/TED.2008.2005184 0018-9383
-
Yang J, He J, Liu F, Zhang L, Liu F, Zhang X and Chan M 2008 IEEE Trans. Electron Devices 55 2898
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, pp. 2898
-
-
Yang, J.1
He, J.2
Liu, F.3
Zhang, L.4
Liu, F.5
Zhang, X.6
Chan, M.7
-
43
-
-
17944383013
-
High-field electrical transport in single-wall carbon nanotubes
-
DOI 10.1103/PhysRevLett.84.2941, 2941
-
Yao Z, Kane C L and Dekker C 2000 Phys. Rev. Lett. 84 2941 (Pubitemid 40598935)
-
(2000)
Physical Review Letters
, vol.84
, Issue.13
, pp. 2941-2944
-
-
Yao, Z.1
Kane, C.L.2
Dekker, C.3
-
47
-
-
20844442624
-
Role of phonon scattering in carbon nanotube field-effect transistors
-
DOI 10.1063/1.1923183, 193103
-
Guo J and Lundstrom M S 2005 Appl. Phys. Lett. 86 193103 (Pubitemid 40861141)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.19
, pp. 1-3
-
-
Guo, J.1
Lundstrom, M.2
-
48
-
-
84862906984
-
-
10.1088/0957-4484/23/28/285707 0957-4484 285707
-
Mohammad S N 2012 Nanotechnology 23 285707
-
(2012)
Nanotechnology
, vol.23
, Issue.28
-
-
Mohammad, S.N.1
-
49
-
-
34248356432
-
Raman spectra and temperature-dependent Raman scattering of silicon nanowires
-
DOI 10.1021/jp0685028
-
Chen Y, Peng B and Wang B 2007 J. Phys. Chem. C 111 5855 (Pubitemid 46732878)
-
(2007)
Journal of Physical Chemistry C
, vol.111
, Issue.16
, pp. 5855-5858
-
-
Chen, Y.1
Peng, B.2
Wang, B.3
-
50
-
-
0000637889
-
-
10.1103/PhysRevB.61.16827 B
-
Wang R-P, Zhou G-W, Liu Y-L, Pan S-H, Zhang H-Z, Yu D-P and Zhang Z 2000 Phys. Rev. B 61 16827
-
(2000)
Phys. Rev.
, vol.61
, pp. 16827
-
-
Wang, R.-P.1
Zhou, G.-W.2
Liu, Y.-L.3
Pan, S.-H.4
Zhang, H.-Z.5
Yu, D.-P.6
Zhang, Z.7
-
55
-
-
61649106325
-
-
10.1021/nl8036323
-
Cui L-F, Ruffo R, Chan C K, Peng H and Cui Y 2009 Nano Lett. 9 491
-
(2009)
Nano Lett.
, vol.9
, pp. 491
-
-
Cui, L.-F.1
Ruffo, R.2
Chan, C.K.3
Peng, H.4
Cui, Y.5
-
56
-
-
79958834879
-
-
10.1021/nl201179n
-
Dan Y, Seo K, Takei K, Meza J H, Javey A and Crozier K B 2011 Nano Lett. 11 2527
-
(2011)
Nano Lett.
, vol.11
, pp. 2527
-
-
Dan, Y.1
Seo, K.2
Takei, K.3
Meza, J.H.4
Javey, A.5
Crozier, K.B.6
-
58
-
-
84877144521
-
-
10.1007/s11426-012-4717-4
-
Cheng S M, Ren T, Ying P L, Yu R, Zhang W H, Zhang J and Li C 2012 Sci. China Chem. 55 2573
-
(2012)
Sci. China Chem.
, vol.55
, pp. 2573
-
-
Cheng, S.M.1
Ren, T.2
Ying, P.L.3
Yu, R.4
Zhang, W.H.5
Zhang, J.6
Li, C.7
-
61
-
-
20444434322
-
Contact mechanisms and design principles for Schottky contacts to group-III nitrides
-
DOI 10.1063/1.1856226, 063703
-
Mohammad S N 2005 J. Appl. Phys. 97 063703 (Pubitemid 40818151)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.6
, pp. 1-19
-
-
Mohammad, S.N.1
-
63
-
-
50249110006
-
-
10.1063/1.2973211 073503
-
see alsoPeng J W, Lee S J, Liang G C A, Singh N, Zhu S Y, Lo G Q and Kwong D L 2008 Appl. Phys. Lett. 93 073503
-
(2008)
Appl. Phys. Lett.
, vol.93
-
-
Peng, J.W.1
Lee, S.J.2
Liang, G.C.A.3
Singh, N.4
Zhu, S.Y.5
Lo, G.Q.6
Kwong, D.L.7
-
64
-
-
32244440456
-
Microstructure and composition of focused-ion-beam-deposited Pt contacts to GaN nanowires
-
DOI 10.1002/adma.200501832
-
Tham D, Nam C-Y and Fischer J E 2006 Adv. Mater. 18 290 (Pubitemid 43213240)
-
(2006)
Advanced Materials
, vol.18
, Issue.3
, pp. 290-294
-
-
Tham, D.1
Nam, C.-Y.2
Fischer, J.E.3
-
66
-
-
34047108622
-
Schottky barrier modulation on silicon nanowires
-
DOI 10.1063/1.2717088
-
Piscator J and Engström O 2007 Appl. Phys. Lett. 90 132107 (Pubitemid 46516864)
-
(2007)
Applied Physics Letters
, vol.90
, Issue.13
, pp. 132107
-
-
Piscator, J.1
Engstrom, O.2
-
68
-
-
0036801206
-
Schottky diodes based on a single GaN nanowire
-
DOI 10.1088/0957-4484/13/5/333, PII S0957448402381698
-
Kim J-R, Oh H, So H M, Kim J J, Kim J, Lee C J and Lyu S C 2002 Nanotechnology 13 701 (Pubitemid 35263806)
-
(2002)
Nanotechnology
, vol.13
, Issue.5
, pp. 701-704
-
-
Kim, J.-R.1
Oh, H.2
So, H.M.3
Kim, J.-J.4
Kim, J.5
Lee, C.J.6
Lyu, S.C.7
-
70
-
-
77649092388
-
-
10.1103/RevModPhys.82.427 0034-6861
-
Rurali R 2010 Rev. Mod. Phys. 82 427
-
(2010)
Rev. Mod. Phys.
, vol.82
, pp. 427
-
-
Rurali, R.1
-
71
-
-
56849128027
-
-
10.1021/nl080610d
-
Colli A, Fasoli A, Ronning C, Pisana S, Piscanec S and Ferrari A C 2008 Nano Lett. 8 2188
-
(2008)
Nano Lett.
, vol.8
, pp. 2188
-
-
Colli, A.1
Fasoli, A.2
Ronning, C.3
Pisana, S.4
Piscanec, S.5
Ferrari, A.C.6
-
72
-
-
0036894931
-
Efficient light emission from crystalline and amorphous silicon nanostructures
-
DOI 10.1016/S0022-2313(02)00425-8, PII S0022231302004258
-
Kanemitsu Y 2002 J. Lumin. 100 209 (Pubitemid 35433360)
-
(2002)
Journal of Luminescence
, vol.100
, Issue.1-4
, pp. 209-217
-
-
Kanemitsu, Y.1
-
73
-
-
32644458380
-
Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes
-
DOI 10.1063/1.2166357
-
He M and Mohammad S N 2006 J. Chem. Phys. 124 064714 (Pubitemid 43248048)
-
(2006)
Journal of Chemical Physics
, vol.124
, Issue.6
, pp. 064714
-
-
He, M.1
Mohammad, S.N.2
-
74
-
-
27144438285
-
Stability of the DX - Center in GaAs quantum dots
-
DOI 10.1103/PhysRevLett.94.185501, 185501
-
Li J B, Wei S H and Wang L W 2005 Phys. Rev. Lett. 94 185501 (Pubitemid 41493060)
-
(2005)
Physical Review Letters
, vol.94
, Issue.18
, pp. 1-4
-
-
Li, J.1
Wei, S.-H.2
Wang, L.-W.3
-
75
-
-
34948889945
-
Quantitative analysis of current-voltage characteristics of semiconducting nanowires: Decoupling of contact effects
-
DOI 10.1002/adfm.200600475
-
Zhang Z, Yao K, Liu Y, Jin C, Liang X, Chen Q and Peng L-M 2007 Adv. Funct. Mater. 17 2478 (Pubitemid 47523614)
-
(2007)
Advanced Functional Materials
, vol.17
, Issue.14
, pp. 2478-2489
-
-
Zhang, Z.1
Yao, K.2
Liu, Y.3
Jin, C.4
Liang, X.5
Chen, Q.6
Peng, L.-M.7
-
77
-
-
84938006654
-
-
10.1109/JRPROC.1957.278348 0096-8390
-
For the discovery of heterostructures and lasers, seeKroemer H 1957 Proc. IRE 45 1535
-
(1957)
Proc. IRE
, vol.45
, pp. 1535
-
-
Kroemer, H.1
-
78
-
-
84892276380
-
-
10.1109/PROC.1963.2706 0018-9219
-
Kroemer H 1963 Proc. IEEE 51 1782
-
(1963)
Proc. IEEE
, vol.51
, pp. 1782
-
-
Kroemer, H.1
-
80
-
-
2942702306
-
-
10.1109/LED.2004.828570 0741-3106
-
Chau R, Datta S, Doczy M, Doyle B, Kavalieros J and Metz M 2004 IEEE Electron. Device Lett. 25 408
-
(2004)
IEEE Electron. Device Lett.
, vol.25
, pp. 408
-
-
Chau, R.1
Datta, S.2
Doczy, M.3
Doyle, B.4
Kavalieros, J.5
Metz, M.6
-
85
-
-
0000454104
-
Silicon nanowires prepared by laser ablation at high temperature
-
DOI 10.1063/1.121199, PII S0003695198012157
-
Zhang Y F, Zhang Y H, Wang N, Yu D P, Lee C S, Bello I and Lee S T 1998 Appl. Phys. Lett. 72 1835 (Pubitemid 128671475)
-
(1998)
Applied Physics Letters
, vol.72
, Issue.15
, pp. 1835-1837
-
-
Zhang, Y.F.1
Tang, Y.H.2
Wang, N.3
Yu, D.P.4
Lee, C.S.5
Bello, I.6
Lee, S.T.7
-
86
-
-
65249115859
-
-
10.1021/jp8070585 1932-7447 C
-
Pint G L, Pheasant S T, Nicholas A, Parra-Vasquez G, Horton C, Xu Y and Hauge R H 2009 J. Phys. Chem. C 113 4125
-
(2009)
J. Phys. Chem.
, vol.113
, pp. 4125
-
-
Pint, G.L.1
Pheasant, S.T.2
Nicholas, A.3
Parra-Vasquez, G.4
Horton, C.5
Xu, Y.6
Hauge, R.H.7
-
87
-
-
0001606308
-
-
10.1063/1.1329863
-
He M, Minus I, Zhou P, Mohammad S N, Halpern J, Jacobs R, Sarney W, Salamanca-Riba L and Vispute R D 2000 Appl. Phys. Lett. 77 3731
-
(2000)
Appl. Phys. Lett.
, vol.77
, pp. 3731
-
-
He, M.1
Minus, I.2
Zhou, P.3
Mohammad, S.N.4
Halpern, J.5
Jacobs, R.6
Sarney, W.7
Salamanca-Riba, L.8
Vispute, R.D.9
-
88
-
-
33748522083
-
Self-catalysis: A contamination-free, substrate-free growth mechanism for single-crystal nanowire and nanotube growth by chemical vapor deposition
-
DOI 10.1063/1.2229195
-
Mohammad S N 2006 J. Chem. Phys. 125 094705 (Pubitemid 44370732)
-
(2006)
Journal of Chemical Physics
, vol.125
, Issue.9
, pp. 094705
-
-
Mohammad, S.N.1
-
92
-
-
0029484212
-
-
10.1126/science.270.5243.1791
-
Trentler T J, Hickman K M, Goel S C, Viano A M, Gibbons P C and Buhro W E 1995 Science 270 1791
-
(1995)
Science
, vol.270
, pp. 1791
-
-
Trentler, T.J.1
Hickman, K.M.2
Goel, S.C.3
Viano, A.M.4
Gibbons, P.C.5
Buhro, W.E.6
-
93
-
-
0034712059
-
Control of thickness and orientation of solution-grown silicon nanowires
-
DOI 10.1126/science.287.5457.1471
-
Holmes J D, Johnston K P, Doty R C and Korgel B A 2000 Science 287 1471 (Pubitemid 30127137)
-
(2000)
Science
, vol.287
, Issue.5457
, pp. 1471-1473
-
-
Holmes, J.D.1
Johnston, K.P.2
Doty, R.C.3
Korgel, B.A.4
-
94
-
-
77954436687
-
-
10.1007/s12274-010-0013-9
-
Chèze C et al 2010 Nano Res. 3 528
-
(2010)
Nano Res.
, vol.3
, pp. 528
-
-
Chèze, C.1
-
100
-
-
40449090496
-
Photovoltaic measurements in single-nanowire silicon solar cells
-
DOI 10.1021/nl072622p
-
Kelzenberg M D, Turner-Evans D B, Kayes B M, Filler M A, Putnam M C, Lewis N S and Atwater H A 2008 Nano Lett. 8 710 (Pubitemid 351346044)
-
(2008)
Nano Letters
, vol.8
, Issue.2
, pp. 710-714
-
-
Kelzenberg, M.D.1
Turner-Evans, D.B.2
Kayes, B.M.3
Filier, M.A.4
Putnam, M.C.5
Lewis, N.S.6
Atwater, H.A.7
-
104
-
-
79955562112
-
-
10.1021/jp2000514 1932-7447 C
-
Jin C, Kim H, Ryu H-Y, Kim H W and Lee C 2011 J. Phys. Chem. C 115 8513
-
(2011)
J. Phys. Chem.
, vol.115
, pp. 8513
-
-
Jin, C.1
Kim, H.2
Ryu, H.-Y.3
Kim, H.W.4
Lee, C.5
-
107
-
-
0030110202
-
-
10.1007/BF01575093 1432-0630 A
-
Saglam M, Ayyildiz E, Turut A, Efeoglu H and Tuzemen S 1996 Appl. Phys. A 62 269
-
(1996)
Appl. Phys.
, vol.62
, pp. 269
-
-
Saglam, M.1
Ayyildiz, E.2
Turut, A.3
Efeoglu, H.4
Tuzemen, S.5
-
108
-
-
27544453460
-
Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires
-
DOI 10.1021/nl0515697
-
Nam C Y, Tham D and Fischer J E 2005 Nano Lett. 5 2029 (Pubitemid 41546333)
-
(2005)
Nano Letters
, vol.5
, Issue.10
, pp. 2029-2033
-
-
Nam, C.Y.1
Tham, D.2
Fischer, J.E.3
|