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Volumn 5, Issue 10, 2005, Pages 2029-2033

Disorder effects in focused-ion-beam-deposited Pt contacts on GaN nanowires

Author keywords

[No Author keywords available]

Indexed keywords

DISORDER EFFECTS; DOPING CONCENTRATION; SCHOTTKY BARRIERS;

EID: 27544453460     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0515697     Document Type: Article
Times cited : (107)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.