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Volumn 17, Issue 11, 2006, Pages

Vertical wrap-gated nanowire transistors

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BEAM EPITAXY; DEPOSITION; ETCHING; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; WIRE;

EID: 33744550370     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/11/S01     Document Type: Article
Times cited : (160)

References (8)
  • 1
    • 0034712059 scopus 로고    scopus 로고
    • Control of thickness and orientation of solution-grown silicon nanowires
    • 10.1126/science.287.5457.1471 0036-8075
    • Holmes J D, Johnston K P, Doty R C and Korgel B A 2000 Control of thickness and orientation of solution-grown silicon nanowires Science 287 1471-3
    • (2000) Science , vol.287 , Issue.5457 , pp. 1471-1473
    • Holmes, J.D.1    Johnston, K.P.2    Doty, R.C.3    Korgel, B.A.4
  • 2
    • 0032498174 scopus 로고    scopus 로고
    • A laser ablation method for the synthesis of crystalline semiconductor nanowires
    • 10.1126/science.279.5348.208 0036-8075
    • Morales A M and Lieber C M 1998 A laser ablation method for the synthesis of crystalline semiconductor nanowires Science 279 208-11
    • (1998) Science , vol.279 , Issue.5348 , pp. 208-211
    • Morales, A.M.1    Lieber, C.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.