Contact mechanisms and design principles for Schottky contacts to group-III nitrides

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Mohammad, S Noor ^a,b,c  

^a Howard University   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT MECHANISMS; METAL DEPOSITION; METAL ETCHING; SCHOTTKY CONTACTS;

CAPACITANCE; CHEMISORPTION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC FIELDS; MORPHOLOGY; PERMITTIVITY; SEMICONDUCTOR MATERIALS; SURFACE TREATMENT; THERMIONIC EMISSION; THERMODYNAMIC STABILITY;

NITRIDES;

EID: 20444434322     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1856226     Document Type: Article

References (56)

1. H. Morko̧ and S. N. Mohammad, Science 267, 51 (1995);
2. S. N. Mohammad, A. Salvador, and H. Morko̧, Proc. IEEE 83, 1306 (1995).
3. S. N. Mohammad and H. Morko̧, Prog. Quantum Electron. 20, 361 (1996).
4. S. N. Mohammad, Z. Fan, A. E. Botchkarev, W. Kim, O. Aktas, A. Salvador, and H. Morko̧, Electron. Lett. 32, 598 (1996).
5. K. Suzue, S. N. Mohammad, Z. Fan, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morko̧, J. Appl. Phys. 80, 4467 (1996).
6. A. Motayed, A. K. Sharma, K. A. Jones, M. A. Derenge, A. A. Iliadis, and S. N. Mohammad, J. Appl. Phys. 96, 3286 (2004).
7. Z. Fan, S. N. Mohammad, W. Kim, O. Aktas, A. E. Botchkarev, and H. Morko̧, Appl. Phys. Lett. 68, 1672 (1996).
8. S. Ruvimov, Appl. Phys. Lett. 69, 1556 (1996).
9. A. Motayed, R. Bathe, M. C. Wood, O. S. Diouf, R. D. Vispute, and S. N. Mohammad, J. Appl. Phys. 93, 1087 (2003).
10. C. Lu, H. Chen, X. Lv, X. Xie, and S. N. Mohammad, J. Appl. Phys. 91, 9218 (2002).
11. A. Motayed, A. V. Davydov, L. Bendersky, M. C. Wood, M. A. Derenge, D. F. Wang, K. A. Jones, and S. N. Mohammad, J. Appl. Phys. 92, 5218 (2002).
12. A. Motayed, M. Jah, A. K. Sharma, W. T. Anderson, C. W. Litton, and S. N. Mohammad, J. Vac. Sci. Technol. B 22, 663 (2004).
13. O. Aktas, Z.-F. Fan, S. N. Mohammad, A. E. Botchkarev, and H. Morko̧, Appl. Phys. Lett. 69, 3872 (1996).
14. A. Motayed, J. Appl. Phys. 95, 1516 (2004).
15. S. N. Mohammad, J. Appl. Phys. 95, 4856 (2004).
16. S. N. Mohammad, J. Appl. Phys. 95, 7940 (2004).
17. S. N. Mohammad, Philos. Mag. 84, 2559 (2004).
18. N. A. Papanicolaou, A. Edwards, M. V. Rao, J. Mittereder, and W. T. Anderson, J. Appl. Phys. 87, 380 (2000).
19. G.-L. Chen, F.-C. Chang, W.-C. Chung, B.-R. Huang, W.-H. Chen, M.-C. Lee, and W.-K. Chen, Jpn. J. Appl. Phys., Part 2 40, L225 (2001).
20. J.-K. Kim, J.-L. Lee, J.-W. Lee, Y.-J. Park, and T. Kim, J. Vac. Sci. Technol. B 17, 497 (1999).
21. J. D. Guo, F. M. Pan, M. S. Feng, R. J. Guo, P. F. Chou, and C. Y. Chang, J. Appl. Phys. 80, 1623 (1996).
22. J. K. Sheu, J. Appl. Phys. 83, 3172 (1998).
23. K.-M. Chang, C.-C. Cheng, and J.-Y. Chu, J. Electrochem. Soc. 149, G367 (2002).
24. A. A. Iliadis, R. D. Vispute, T. Venkatesan, and K. A. Jones, Thin Solid Films 420-421, 478 (2002).
25. H. S. Venugopalan, S. E. Mohney, J. M. DeLucca, B. P. Luther, and G. E. Bulman, J. Vac. Sci. Technol. A 16, 607 (1998).
26. G. T. Dang, J. Vac. Sci. Technol. A 18, 1135 (2000).
27. L. S. Yu, Q. Z. Liu, Q. J. Xing, D. J. Qiao, S. S. Lau, and J. Redwing, J. Appl. Phys. 84, 2099 (1998).
28. A. J. Steckl, M. Garter, R. Birkhahn, and J. Scofield, Appl. Phys. Lett. 73, 2450 (1998).
29. M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62, 1786 (1993).
30. J. Spradlin, S. Dogan, M. Mikkelson, D. Huang, L. He, D. Johnstone, and H. Morko̧, Appl. Phys. Lett. 82, 3556 (2003).
31. S. K. Noh and P. K. Bhattacharya, Appl. Phys. Lett. 78, 3642 (2001).
32. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993);
33. M. Misra, A. V. Sampath, and T. D. Moustakas, Appl. Phys. Lett. 76, 1045 (2000).
34. K. A. Rickert, A. B. Ellis, J.-K. Kim, J.-L. Lee, F. J. Himpsel, F. Dwikusuma, and T. F. Kuech, J. Appl. Phys. 92, 6671 (2002).
35. C. J. Lu, A. V. Davydov, D. Josell, and L. A. Bendersky, J. Appl. Phys. 94, 245 (2003).
36. M. Suzuki, T. Kawakami, T. Arai, S. Kobayashi, Y. Koide, T. Uemura, N. Shibata, and M. Murakami, Appl. Phys. Lett. 74, 275 (1999). Enthalpy of formation of Ti hydride and Ta hydride is more negative than that of Mg hydride. So, Ti and Ta depositions facilitated the out diffusion of H atoms from Mg-doped GaN making it more heavily p doped.
37. L. Wang, M. I. Nathan, T. H. Lim, M. A. Khan, and Q. Chen, Appl. Phys. Lett. 68, 1267 (1996).
38. J. K. Ho, C.-S. Jong, C. C. Chiu, C.-N. Huang, K.-K. Shih, L.-C. Chen, F.-R. Chen, and J.-J. Kai, J. Appl. Phys. 86, 4491 (1999);
39. L.-C. Chen, J.-K. Ho, C.-S. Jong, C. C. Chiu, K.-K. Shih, F.-R. Chen, J.-J. Kai, and Li Chang, Appl. Phys. Lett. 76, 3703 (2000). The TEM data for oxidized PtNip-GaN and AuNip-GaN contacts presented in this report confirms also the in diffusion of Pt and Au more than Ni onto the p-GaN surface under RTA, and the formation of NiO cap layer on the top of Au or Pt-Ni-Ga alloy.
40. Q. Z. Liu and S. S. Lau, Solid-State Electron. 43, 677 (1998). This article presents a good review of the III-V nitride ohmic and Schottky contacts made until 1998.
41. U. Lindefelt, J. Appl. Phys. 84, 2628 (1998).
42. J. Neugebauer and C. G. van de Walle, Phys. Rev. B 50, 8067 (1994).
43. C. C. Kim, J. K. Kim, J.-L. Lee, J.-H. Je, M. S. Yi, D. Y. Noh, Y. Hwu, and P. Ruterana, Appl. Phys. Lett. 78, 3773 (2001).
44. L.-C. Chen, J. Appl. Phys. 86, 3826 (1999).
45. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988, Chap.).
46. That N vacancy acts as donor in n-GaN was first established by D. W. Jenkins and J. D. Dow, Phys. Rev. B 39, 3317 (1989). Theoretical calculations presented in this article gives good estimates of the relative energy levels of various defects, including those of N and Q (e.g., Al, In, and Ga) vacancies in III-V nitrides.
47. The acceptor-type character of the Ga vacancy in p-GaN was established by D. C. Look, D. C. Reynolds, U. W. Hemsky, J. R. Sizelove, R. L. Jones, and R. J. Molner, Phys. Rev. Lett. 79, 2273 (1997).
48. H. Morko̧, R. Cingolani, and B. Gil, Solid-State Electron. 46, 1753 (2002). This article gives a thorough review of the polarization effects in nitride semiconductor device structures and describes the influence of polarization on the performance of modulation doped field effect transistors.
49. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1982), pp. 250-254 and 304-306.
50. G. L. Chen, F. C. Chang, K. C. Shen, J. Ou, W. H. Chen, M. C. Lee, M. J. Jou, and C. N. Huang, Appl. Phys. Lett. 80, 595 (2002).
51. L. He, X. J. Wang, and R. Zhang, J. Vac. Sci. Technol. A 17, 1217 (1999).
52. J. Schalwig, G. Muller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Gorgens, and D. Dollinger, Appl. Phys. Lett. 80, 1222 (2002).
53. T. Mori, Appl. Phys. Lett. 69, 3537 (1996).
54. K. Shiojima, T. Sugahara, and S. Sakai, Appl. Phys. Lett. 74, 1936 (1999).
55. Dieter K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998), p. 392.
56. C.-S. Lee, E. Y. Chang, L. Chang, C.-Y. Fang, Y.-L. Huang, and J.-S. Huang, Jpn. J. Appl. Phys., Part 1 42, 4193 (2003).